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Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method

A technology of laser pulse deposition and thin film material, which is applied in the direction of metal material coating process, circuit, electrical components, etc., to achieve the effect of simple method, good controllability and stable process

Inactive Publication Date: 2009-10-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, these films have large band gaps and are not suitable for applications in the field of visible light, or the magnitude of the response can be further improved.

Method used

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  • Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method
  • Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method
  • Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method

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Experimental program
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Effect test

Embodiment 1

[0017] The iron-doped carbon thin film material of white light photoconductive effect is prepared by laser pulse deposition method, and the processed Si (100) substrate, high-purity C target (the purity of the C target is 99.9%) and the Fe target (the purity of the Fe target 99.99%) into the vacuum coating chamber of the laser pulse deposition equipment, and vacuum the back of the coating chamber to 5×10 with a mechanical pump and a molecular pump -4 After Pa, heat the Si substrate to 400°C, and then use a KrF laser (LambdaPhysics LPX205, 248nm, 25ns FWHM) to bombard the Fe target with a pulse with an energy of 360mJ, and start the motor that rotates the Fe target and the Si substrate at the same time to start deposition Fe layer thin film, the frequency of the pulsed laser is 1Hz, the deposition time is 4min, and then the high-purity C target is bombarded with the pulse energy of 300mJ generated by the KrF laser (Lambda Physics LPX205, 248nm, 25ns FWHM), and the rotating C tar...

Embodiment 2

[0021] The iron-doped carbon thin film material of white light photoconductive effect is prepared by laser pulse deposition method, and the processed Si (100) substrate, high-purity C target (the purity of the C target is 99.9%) and the Fe target (the purity of the Fe target 99.99%) into the vacuum coating chamber of the laser pulse deposition equipment, and vacuum the back of the coating chamber to 4.5×10 with a mechanical pump and a molecular pump -4 After Pa, heat the Si substrate to 450°C, and then use a KrF laser (Lambda Physics LPX205, 248nm, 25ns FWHM) to bombard the Fe target with a pulse with an energy of 340mJ, and start the motor that rotates the Fe target and the Si substrate at the same time, and start Deposit the Fe layer thin film, the frequency of the pulse laser is 4Hz, the deposition time is 2min, and then the high-purity C target is bombarded with the pulse energy of 300mJ generated by the KrF laser (Lambda PhysicsLPX205, 248nm, 25ns FWHM), and the rotating C...

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Abstract

The present invention pertains to the technical field of optical sensors and photoelectric device material and prepares iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition (PLD) method. Put Si (100) substrate, high-purity C target and Fe target into the vacuum coating chamber of PLD equipment, vacuumize till 8*10 Pa, heat Si substrate to 350 DEG C-450 DEG C, bombard Fe target with KrF laser in pulse, deposit Fe-layer membrane, bombard high-purity C target with KrF laser in pulse, deposit C-layer membrane, hold temperature and anneal 10min-30min after deposition, let Fe atoms disperse into C layer, naturally cool to room temperature to obtain iron doped carbon membrane material. The PLD method for preparation of iron doped carbon membrane is simple and features stable process, high controllability and very high preparation efficiency. Moreover, during membrane deposition, the use of inflammable, explosive and toxic substances is avoided. This suits the requirement of environmental protection.

Description

technical field [0001] The invention belongs to the technical field of optical sensors and optoelectronic device materials, in particular to a laser pulse deposition method to prepare an iron-doped carbon film material with white light photoconductive effect. Background technique [0002] Photoconductive materials have attracted much attention due to their applications in optical detection and sensing. As early as the 1980s, Tanioka Kenji and others invented the Te-doped Se photoconductive film CN85104072B. Silicon-based photoconductive materials have also been extensively studied. In order to avoid the use of highly toxic gases such as phosphine, borane, and arsine in the production process, Wu Zongyan and others invented the use of hydrogen, helium or argon as the carrier gas of III-V simple substances or compounds to dope amorphous silicon Method for thin films CN 85100512. However, in Wu's method, toxic gases such as silane are still used. As people's environmental p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/28H01L31/0288H01L31/18
CPCY02P70/50
Inventor 章晓中万蔡华高熙礼张歆吴利华
Owner TSINGHUA UNIV