A kind of synthesis method of tellurium-containing semiconductor nanocrystal

A synthesis method and semiconductor technology, applied in the fields of selenium/tellurium compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of reduced cost of synthesizing nanocrystals, toxic, flammable, and explosive, etc., and achieve cost savings, easy operation, and size. Evenly distributed effect

Inactive Publication Date: 2012-02-22
南京紫同纳米科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In 2000, Peng et al. discovered a relatively cheap, inorganic, and relatively less toxic method to synthesize nanocrystals, that is, cadmium oxide (CdO) was used instead of methyl cadmium (Cd(CH 3 ) 2 ) to synthesize nanocrystals such as CdTe, which further reduces the cost of synthesizing nanocrystals; however, Peng et al. and other groups have been using tributylphosphine (tributylphosphine, TBP) or trioctylphosphine (trioctylphosphine) when synthesizing tellurium precursors , TOP) dissolving tellurium as the precursor of tellurium, this method has application limitations because tributylphosphine or trioctylphosphine are toxic, flammable, explosive and relatively expensive drugs

Method used

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  • A kind of synthesis method of tellurium-containing semiconductor nanocrystal
  • A kind of synthesis method of tellurium-containing semiconductor nanocrystal
  • A kind of synthesis method of tellurium-containing semiconductor nanocrystal

Examples

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Effect test

Embodiment 1-2

[0024] The preparation of embodiment 1-2CdTe nanocrystal

Embodiment 1

[0026] Add 1mmol Te powder to 10g trioctylphosphine oxide TOPO and heat to 380°C under nitrogen atmosphere until Te is completely dissolved to obtain a light yellow solution that is the Te precursor, which is cooled for later use.

[0027] 0.1 mmol of cadmium decacarbonate and 4 g of octadecene were mixed into a 25 mL three-neck flask, and heated to 240° C. (180-350° C. is acceptable) under nitrogen atmosphere to obtain a clear and uniform solution, namely the cadmium precursor.

[0028] Take 1g of Te precursor solution and inject it into the Cd solution at 240°C, and take samples for observation at different times. After reacting for 3 hours, cool down, add methanol to precipitate, and centrifuge to obtain CdTe nanocrystals.

Embodiment 2

[0030] Add 1mmol Te powder to 10g trioctylphosphine oxide TOPO and heat to 380°C under nitrogen atmosphere until Te is completely dissolved to obtain a light yellow solution that is the Te precursor, which is cooled for later use.

[0031] 0.4 mmol of cadmium decacarbonate and 6 g of octadecene were mixed into a 25 mL three-necked flask, and heated to 320° C. (180-350° C. was acceptable) under nitrogen atmosphere to obtain a clear and homogeneous solution, namely the cadmium precursor.

[0032] Take 2g of Te precursor solution and inject it into the Cd solution at 300°C, and take samples for observation at different times. After reacting for 3 hours, cool down, add methanol to precipitate, and centrifuge to obtain CdTe nanocrystals.

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Abstract

The invention particularly relates to a synthesis method of tellurium-containing semiconductor nanocrystals. The chemical formula of the tellurium-containing semiconductor nanocrystal is shown as CdTexA1-x, wherein 0<x≤1, A is Se or S; the steps are as follows: preparation of the precursor; mixing the precursor to obtain a reaction solution; reacting the reaction solution for 1s-3h , cooling and precipitating to obtain the tellurium-containing semiconductor nanocrystal. Conventional, stable and low-toxic drugs are used in the synthesis process of the method, and the cost can be saved by more than 50%. The method is safe, easy to operate and has good repeatability. The synthesized Te-containing nanocrystals almost cover the visible-near-infrared light region; the size distribution is uniform, the fluorescence efficiency is high, the half-height width is narrow, and the photobleaching resistance is good; it has high application value in laboratory and industrial production .

Description

(1) Technical field [0001] The invention belongs to the technical field of synthesis of semiconductor nanocrystals, in particular to a synthesis method of tellurium-containing semiconductor nanocrystals. (2) Background technology [0002] Semiconductor nanoparticles, especially II-VI semiconductor nanoparticles are research hotspots in recent years. Semiconductor nanoparticles are also called semiconductor quantum dots (Quantum Dots, referred to as QDs). Because of their relatively small size, between a few to a dozen nanometers, they have many physical and chemical properties that bulk materials do not have, such as quantum size effect, dielectric confinement effect, surface effect, etc., so that it has broad application prospects in optoelectronic devices, solar cells, and laser biomarkers. In recent years, the research on semiconductor nanocrystals in the visible light-emitting region, especially the application as a biomarker, has attracted the attention of many scienti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00C09K9/00
Inventor 李林松申怀彬
Owner 南京紫同纳米科技有限公司
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