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Solid-state imaging device, manufacturing method thereof and electronic device

A technology for a solid-state imaging device and a manufacturing method, which is applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve problems such as unfavorable light-gathering efficiency and reduced sensor sensitivity, and achieve the effect of realizing processing steps.

Active Publication Date: 2009-10-14
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] Moreover, in figure 1 In the shown structure, since the protrusion height h4 protruding from the substrate is large for the insulating layer constituting the isolation region in the pixel portion, the distance L1 between the photodiode and the on-chip microlens tends to become large. It is not conducive to light collection efficiency and will lead to a decrease in sensor sensitivity

Method used

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  • Solid-state imaging device, manufacturing method thereof and electronic device
  • Solid-state imaging device, manufacturing method thereof and electronic device
  • Solid-state imaging device, manufacturing method thereof and electronic device

Examples

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no. 1 example

[0077] Figure 4 is a schematic diagram showing the solid-state imaging device of the first embodiment of the present invention. refer to Figure 4 , the main part of the image pickup device shown includes a pixel portion (so-called image pickup region) 23 and a peripheral circuit portion 24 respectively formed on a semiconductor substrate 22 made of, for example, a silicon substrate. The solid-state imaging device 21 of the present embodiment includes a pixel section 23 provided with a plurality of pixels on a semiconductor substrate 22 , and a peripheral circuit section 24 including, for example, logic circuits formed at the periphery of the pixel section 23 .

[0078] The pixel section 23 is provided with a plurality of unit pixels 25 arranged in a two-dimensional array, each of which is formed to include a photodiode (PD) 26 as a photoelectric conversion element and several pixel transistors 27 .

[0079] For clarity, these pixel transistors are represented by a single p...

no. 1 approach

[0122] Below, refer to Figure 13A ~ Figure 17J A first embodiment of the solid-state imaging device manufacturing method of the present invention will be described. This embodiment is suitable for manufacturing according to the aforementioned Image 6 The solid-state imaging device of the second embodiment shown in the solid-state imaging device is particularly suitable for forming its isolation region.

[0123] First, refer to Figure 13A , a thin insulating film 39 having a first predetermined film thickness is formed on the main surface of the semiconductor substrate 22, and then another insulating film 61 having an etching rate different from the insulating film 39 and having a second predetermined film thickness is formed on the insulating film 39. As the insulating film 39, for example, a silicon oxide film can be used. As the insulating film 61, for example, a silicon nitride film having a film thickness of about 100 nm formed by a low-pressure CVD (Chemical Vapor D...

Embodiment approach

[0138] Below, refer to Figure 18A ~ Figure 22 A second embodiment of the solid-state imaging device manufacturing method of the present invention will be described. This embodiment is suitable for manufacturing according to the aforementioned Image 6 The solid-state imaging device of the second embodiment shown in the solid-state imaging device is particularly suitable for forming its isolation region.

[0139] First, refer to Figure 18A, a thin insulating film 39 having a first predetermined film thickness is formed on the main surface of the semiconductor substrate 22, and then another insulating film 61 having an etching rate different from the insulating film 39 and having a second predetermined film thickness is formed on the insulating film 39. As the insulating film 39, for example, a silicon oxide film can be used. As the insulating film 61, for example, a silicon nitride film having a film thickness of about 100 nm formed by a low-pressure CVD method can be used...

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Abstract

The invention discloses a solid-state imaging device which includes a pixel part, a peripheral circuit part, a first isolation region formed on a semiconductor substrate in the peripheral circuit partin a form of shallow trench isolation STI structure and a second isolation region formed on the semiconductor substrate in the pixel part in the form of STI structure. The part of the second isolation region buried into the semiconductor substrate is shallower than the part of the first isolation region buried into the semiconductor substrate; and the height of the top of the second isolation region is equal to the height of the top of the first isolation region. The invention further discloses a manufacturing method of the solid-state imaging device and an electronic device provided with thesolid-state imaging device. The invention can reduce processing steps and improve pixel characteristics including sensitivity.

Description

[0001] Cross References to Related Applications [0002] This application contains disclosures related to Japanese prior patent applications JP 2008-101971, JP2008-199050, and JP2008-201117 filed with the Japan Patent Office on April 9, 2008, July 31, 2008, and August 4, 2008, respectively. These prior patent applications are hereby incorporated by reference in their entirety to the subject matter to which they are subject. technical field [0003] The present invention generally relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic device provided with the solid-state imaging device. Background technique [0004] Solid-state imaging devices are roughly classified into two types, namely, amplification type solid-state imaging devices generally described by CMOS (Complementary Metal Oxide Semiconductor) image sensors and charge transport type imaging devices typified by CCD (Charge Coupled Device) image sensors. ...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/82H01L21/762H04N5/335H01L21/76H01L27/14H04N5/369H04N5/374
Inventor 田谷圭司松本拓治舘下八州志古闲史彦永野隆史豊岛隆宽山口哲司中泽圭一宫下直幸长滨嘉彦
Owner SONY CORP
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