The present invention provides a gate driver basing on IGZO process, comprising: GOAs in cascade connection comprising a Nth-stage GOA, wherein the Nth-stage GOA further comprising: a pull-up control part 100, a pull-up part 200, a transfer part 300, a pull-down part 400, a pull-down holding part 500, a boost part 600, a first negative supply VSS1, a second negative supply VSS2, a third negative supply VSS3, which are three gradually decreasing negative supplies and pull down an output terminal G(N), a first node Q(N), a second node P(N), and a driving single ST(N) to prevent the electrical leakage of TFTs effectively. And channels of the TFT switches of the gate driver basing on the IGZO process are oxide semiconductor channels.