Polarized light-emitting diode

A light-emitting diode, polarization technology, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effects of performance optimization, cost reduction, and excellent performance

Inactive Publication Date: 2009-11-04
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, so far, the idea of ​​designing the structure of the LED chip itself in

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] Example 1:

[0025] See attached figure 1 , Which is a schematic cross-sectional view of the structure of an embossed polarized light emitting diode chip provided in this embodiment. The structure of the polarized light emitting diode chip prepared on the surface of III-V gallium nitride based LED is: on the substrate material 1, there is an LED light emitting working area, including n-type GaN area 2, p-type GaN area 4 and InGaN / GaN Quantum well 3; there is an insulating dielectric film 5 in sequence on the p-type GaN region, and the insulating medium is SiO 2 Or SiN; p-type layer transparent electrode 6; p-type layer metal electrode 7 and embossed metal film grating 9; there is also an n-type layer metal electrode 8 on the n-type GaN area exposed by etching.

[0026] The shape, period, duty cycle, and thickness of the grating are theoretically calculated according to the specific emission wavelength of the LED, and theoretically calculated according to the finite-differe...

Example Embodiment

[0035] Example 2:

[0036] See attached Figure 4 , It is a structural cross-sectional schematic diagram of an embedded polarized light emitting diode chip provided in this embodiment; the preparation of the embedded polarized light emitting diode chip on the surface of III-V group gallium nitride-based LED includes: substrate material 1; n-type GaN layer 2; InGaN / GaN quantum well 3; p-type GaN layer 4; SiO 2 Insulating dielectric film 5; p-type layer transparent electrode 6; p-type layer metal electrode 7; n-type layer metal electrode 8 and embedded metal GaN grating 10.

[0037] Compared with the structure of Example 1, the difference lies in that the periodic grating of this structure is prepared on the p-type layer of GaN, and the grating is formed with the uneven structure of GaN.

[0038] In this embodiment, after calculation, it is determined that the shape of the grating is rectangular, the grating duty ratio is 0.52, the grating thickness is 300nm, and the grating period i...

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Abstract

The invention discloses a polarized light-emitting diode (LED). An LED chip of the polarized LED comprises a work area consisting of an n-type area, p-type area and a quantum well structure, a substrate, an insulating dielectric film, a transparent electrode and a metal electrode. The polarized LED is characterized in that a raised or embedded grating is prepared on the light-emitting surface of the LED chip, and the grating has the period between 50 and 600 nm, the duty cycle between 0.2 and 0.9 and the thickness between 50 and 400 nm. Compared with the prior LED external polarizer for realizing polarization, the polarized LED adopts a technical proposal of directly integrating and manufacturing a grating structure on the surface of the LED chip and achieving the aim that the emitted light of the LED chip is polarized light with no external polarizer and other structures. Therefore, light-emitting devices are greatly reduced in integral volume, optimized in performances and lower in cost. In addition, the polarized LED can be integrated on a light-emitting chip at a time through a semiconductor lithography process, and is easy to realize industrialization, popularization and application.

Description

technical field [0001] The invention relates to a light-emitting diode (LED), in particular to a light-emitting diode with polarized light output. Background technique [0002] A light emitting diode (LED) is a semiconductor light source device that is stimulated to emit light when electrically biased in the forward direction. The basic principle of LED light emission is: when the semiconductor chip with pn junction structure is applied, electrons and holes are injected from the n-type region and p-type region respectively, and the recombination of electrons and holes is expressed as photons. The form releases energy, and the emission wavelength depends on the forbidden band width of the material. At present, common LEDs include Al-In-Ga-N series of third-generation semiconductors that emit purple, blue, and green, Al-In-Ga-P series that emit yellow light, and Al-In-Ga-As that emit red light. series, and the ZnO series that is currently under rapid development. [0003] A...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 曹冰张桂菊韩琴王钦华
Owner SUZHOU UNIV
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