Polarized light-emitting diode
A light-emitting diode, polarization technology, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effects of performance optimization, cost reduction, and excellent performance
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Example Embodiment
[0024] Example 1:
[0025] See attached figure 1 , Which is a schematic cross-sectional view of the structure of an embossed polarized light emitting diode chip provided in this embodiment. The structure of the polarized light emitting diode chip prepared on the surface of III-V gallium nitride based LED is: on the substrate material 1, there is an LED light emitting working area, including n-type GaN area 2, p-type GaN area 4 and InGaN / GaN Quantum well 3; there is an insulating dielectric film 5 in sequence on the p-type GaN region, and the insulating medium is SiO 2 Or SiN; p-type layer transparent electrode 6; p-type layer metal electrode 7 and embossed metal film grating 9; there is also an n-type layer metal electrode 8 on the n-type GaN area exposed by etching.
[0026] The shape, period, duty cycle, and thickness of the grating are theoretically calculated according to the specific emission wavelength of the LED, and theoretically calculated according to the finite-differe...
Example Embodiment
[0035] Example 2:
[0036] See attached Figure 4 , It is a structural cross-sectional schematic diagram of an embedded polarized light emitting diode chip provided in this embodiment; the preparation of the embedded polarized light emitting diode chip on the surface of III-V group gallium nitride-based LED includes: substrate material 1; n-type GaN layer 2; InGaN / GaN quantum well 3; p-type GaN layer 4; SiO 2 Insulating dielectric film 5; p-type layer transparent electrode 6; p-type layer metal electrode 7; n-type layer metal electrode 8 and embedded metal GaN grating 10.
[0037] Compared with the structure of Example 1, the difference lies in that the periodic grating of this structure is prepared on the p-type layer of GaN, and the grating is formed with the uneven structure of GaN.
[0038] In this embodiment, after calculation, it is determined that the shape of the grating is rectangular, the grating duty ratio is 0.52, the grating thickness is 300nm, and the grating period i...
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