Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Polarized light-emitting diode

A light-emitting diode, polarization technology, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effects of performance optimization, cost reduction, and excellent performance

Inactive Publication Date: 2009-11-04
SUZHOU UNIV
View PDF3 Cites 36 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, the idea of ​​designing the structure of the LED chip itself in order to realize an efficient polarized light output LED has not been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polarized light-emitting diode
  • Polarized light-emitting diode
  • Polarized light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] See attached figure 1 , which is a schematic cross-sectional view of the structure of a relief-type polarized light-emitting diode chip provided in this embodiment. The structure of the polarized light-emitting diode chip prepared on the surface of the III-V gallium nitride-based LED is as follows: an LED light-emitting working area is grown on the substrate material 1, including n-type GaN region 2, p-type GaN region 4 and InGaN / GaN Quantum well 3; on the p-type GaN region, there is an insulating dielectric film 5 in sequence, and the insulating medium is SiO 2 or SiN; p-type layer transparent electrode 6; p-type layer metal electrode 7 and relief metal film grating 9; and n-type layer metal electrode 8 on the n-type GaN region exposed by etching.

[0026] The shape, period, duty cycle, and thickness of the grating are theoretically calculated according to the specific luminous wavelength of the LED. The combination of the best polarization extinction ratio and trans...

Embodiment 2

[0036] See attached Figure 4 , which is a structural cross-sectional schematic diagram of an embedded polarized light-emitting diode chip provided in this embodiment; the embedded polarized light-emitting diode chip prepared on the surface of a III-V group gallium nitride-based LED includes: substrate material 1; n-type GaN layer 2; InGaN / GaN quantum well 3; p-type GaN layer 4; SiO 2 Insulating dielectric film 5; p-type layer transparent electrode 6; p-type layer metal electrode 7; n-type layer metal electrode 8 and embedded metal GaN grating 10.

[0037] Compared with the structure of Example 1, the difference lies in that the periodic grating of this structure is prepared on the p-type layer of GaN, and the grating is formed by the concavo-convex structure of GaN.

[0038] In this embodiment, after calculation, it is determined that the shape of the grating is a rectangle, the duty ratio of the grating is 0.52, the thickness of the grating is 300nm, and the period of the g...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a polarized light-emitting diode (LED). An LED chip of the polarized LED comprises a work area consisting of an n-type area, p-type area and a quantum well structure, a substrate, an insulating dielectric film, a transparent electrode and a metal electrode. The polarized LED is characterized in that a raised or embedded grating is prepared on the light-emitting surface of the LED chip, and the grating has the period between 50 and 600 nm, the duty cycle between 0.2 and 0.9 and the thickness between 50 and 400 nm. Compared with the prior LED external polarizer for realizing polarization, the polarized LED adopts a technical proposal of directly integrating and manufacturing a grating structure on the surface of the LED chip and achieving the aim that the emitted light of the LED chip is polarized light with no external polarizer and other structures. Therefore, light-emitting devices are greatly reduced in integral volume, optimized in performances and lower in cost. In addition, the polarized LED can be integrated on a light-emitting chip at a time through a semiconductor lithography process, and is easy to realize industrialization, popularization and application.

Description

technical field [0001] The invention relates to a light-emitting diode (LED), in particular to a light-emitting diode with polarized light output. Background technique [0002] A light emitting diode (LED) is a semiconductor light source device that is stimulated to emit light when electrically biased in the forward direction. The basic principle of LED light emission is: when the semiconductor chip with pn junction structure is applied, electrons and holes are injected from the n-type region and p-type region respectively, and the recombination of electrons and holes is expressed as photons. The form releases energy, and the emission wavelength depends on the forbidden band width of the material. At present, common LEDs include Al-In-Ga-N series of third-generation semiconductors that emit purple, blue, and green, Al-In-Ga-P series that emit yellow light, and Al-In-Ga-As that emit red light. series, and the ZnO series that is currently under rapid development. [0003] A...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00
Inventor 曹冰张桂菊韩琴王钦华
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com