Semiconductor material with ZnO cone-shaped nano structure compounded on silicon chip and preparation method thereof
A nanostructure and semiconductor technology, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of high cost, high repeatability, and harsh preparation method conditions, and achieve low cost, high repeatability, and low growth temperature Effect
Inactive Publication Date: 2009-11-18
EAST CHINA NORMAL UNIVERSITY
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Problems solved by technology
[0005] The second object of the present invention is to provide the preparation method of the above-mentioned material, to solve the problem of harsh conditions and high cost of the existing ZnO nanometer material preparation method, to provide a new low-cost, high repeatability, suitable for large-scale industrial production method
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Embodiment 1
[0018] a, configure the reaction solution: zinc acetate (Zn(CH 3 COO) 2 ) powder is dissolved in water, and ammonia water is added to adjust the pH value of the solution to 7.5.
[0019] b. Grow ZnO conical nanostructures on silicon wafers: first put the cleaned silicon (100) wafers into the autoclave, then pour the above solution into the autoclave, seal the autoclave and put it into the blast drying box, keep the reaction at 60°C for 6 hours, and the desired material can be obtained after natural cooling.
Embodiment 2
[0021] a, configure the reaction solution: zinc acetate (Zn(CH 3 COO) 2 ) powder is dissolved in water, and ammonia water is added to adjust the pH value of the solution at 8.
[0022] b. Grow ZnO conical nanostructures on silicon wafers: first put the cleaned silicon (111) wafers into an autoclave, then pour the above solution into the autoclave, seal the autoclave and put it into the blast drying box, keep the reaction at 65°C for 5.5 hours, and the desired material can be obtained after natural cooling.
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The invention discloses a semiconductor material with ZnO cone-shaped nano structure compounded on silicon chip and preparation method thereof. The material comprises a substrate, the substrate is a silicon chip, and a ZnO crystal grows on the surface of the substrate; wherein, the ZnO crystal grows along the direction vertical to silicon substrate and is in hexangular spiauterite pointed cone structure, the length is 5-10Mum, the diameter of the bottom is 3-6Mum, and the point is 100-150nm. The preparation method includes that zinc acetate aqueous solution is added into ammonia and then is put into a high pressure kettle for reaction, so as to obtain the ZnO cone-shaped nano structure. The invention has the advantages of low cost, low growth temperature and high reproducibility, the obtained ZnO cone-shaped nano structure is provided with a nano point, the bottom thereof is in hexangular structure, thus the structure is unique; and therefore, the semiconductor material can be used as high efficiency field emission material and can be used for preparing the probes of various precise instruments; besides, the semiconductor material can be combined with current matured semiconductor silicon integrated nano circuit technology and is suitable for the development of nano integrated photoelectronic devices.
Description
technical field [0001] The invention relates to the technical field of optoelectronic materials, semiconductor materials and devices, in particular to a semiconductor material with a ZnO cone nanostructure grown on a silicon substrate and a preparation method thereof. Background technique [0002] ZnO is a wide bandgap semiconductor with a direct band gap, and has a large exciton binding energy. It has great application prospects in optoelectronic devices, and because of its thermal stability, high mechanical strength and chemical stability, etc. properties, aroused people's interest in the study of the field emission characteristics of its nanostructures. [0003] Recently, various one-dimensional ZnO nanostructures, such as nanowires, nanobelts, nanoneedles, nano Pencils, nanorods, etc., and the optoelectronic properties of these nanostructures have been studied. However, there are few methods that can be applied to large-scale production, and the reaction conditions are...
Claims
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Login to View More IPC IPC(8): C04B41/50B82B3/00
Inventor 汪阳郁可李立珺朱自强
Owner EAST CHINA NORMAL UNIVERSITY