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Semiconductor power conversion device

A power conversion device, semiconductor technology, applied in the direction of output power conversion device, pulse technology, electronic switch, etc.

Active Publication Date: 2009-12-16
TOYOTA JIDOSHA KK +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is not easy to strictly limit the dv / dt of the collector-emitter voltage of the semiconductor switching elements constituting the inverter by active gate control
As a result, it is difficult to reliably suppress the dv / dt of the output voltage of the inverter, that is, the voltage between terminals of the motor within a predetermined range

Method used

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  • Semiconductor power conversion device
  • Semiconductor power conversion device
  • Semiconductor power conversion device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0060] figure 1 It is a circuit diagram showing a configuration example of the semiconductor power conversion device according to the embodiment of the present invention.

[0061] refer to figure 1 The power conversion system 5 includes: a DC power supply 10, a converter 20, a smoothing capacitor 30, an inverter 40 shown as a representative example of a semiconductor power conversion device according to an embodiment of the present invention, and the inverter 40 is driven and controlled. The electric motor 60.

[0062] The DC power supply 10 outputs a DC voltage Vb. Converter 20 has a DC voltage conversion function, and performs voltage conversion on output voltage Vb from DC power supply 10 to output DC voltage VH. The output voltage of converter 20 is smoothed by smoothing capacitor 30 .

[0063] Inverter 40 has six arms 50-1 to 50-6 constituting upper and lower arms of three phases, respectively. As will be described later, each of the bridge arms 50 (generally referred ...

Embodiment approach 2

[0103] In Embodiment 2, an active gate control that can directly limit the voltage change rate, which is the time differential value of the inter-terminal voltage Vce of the semiconductor switching element 100, by setting a control target for the voltage change rate will be described. .

[0104] Figure 6 It is a block diagram for explaining the switching control configuration of each arm of the semiconductor power conversion device according to Embodiment 2 of the present invention.

[0105] refer to Figure 6 , in the switch control structure according to Embodiment 2, the drive control unit 70 includes a voltage differential unit 107, a voltage increase rate control target setting unit 110, an active gate control unit 72, a voltage drop rate control target setting unit 115, and active gate control section 73 to replace the figure 1 The active gate control part 71 in. Like the active gate control unit 71 , the constituent elements of the voltage differentiating unit 107 ...

Embodiment approach 3

[0138] Figure 10 It is a block diagram for explaining the switching control configuration of each arm of the semiconductor power conversion device according to the third embodiment.

[0139] refer to Figure 10 , in the switch control structure involved in Embodiment 3, with Figure 6 Compared with the switch control structure according to the illustrated second embodiment, the drive control unit 70 is further provided with changeover switches 108 and 109 . The selector switches 108 and 109 may be configured by either hardware or software.

[0140] The selector switch 108 switches the input to the voltage calculation unit 111 between the voltage change rate dVce / dt output from the voltage differential unit 107 and the ground level (GND). When the voltage change rate dVce / dt is input to the voltage calculation unit 111 by switching the switch 108 ( Figure 10 I side), the active gate control unit 72 generates the voltage correction amount V2 by the same feedback control as...

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Abstract

A surge voltage target setting unit (103) acquires a main circuit power source voltage (VH) of a semiconductor power conversion device, on the basis of the inter-terminal voltage (Vce) of a semiconductor switching element (100) detected by a voltage detecting unit (102), and sets the control target (Vm) of a surge voltage in accordance with the main circuit power source voltage acquired. When the inter-terminal voltage (Vce) exceeds the control target (Vm) at the turn-off time of the semiconductor switching element (100), an active gate control unit (71) sets a voltage correction quantity (V1), on the basis of the feedback of the inter-terminal voltage (Vce), so that the gate voltage (Vg) is corrected in a direction to raise a gate voltage (Vg), i.e., in a direction to reduce a turn-off rate.

Description

technical field [0001] The present invention relates to semiconductor power conversion devices, and more particularly to active gate control for suppressing voltage fluctuations that occur when semiconductor switching elements constituting semiconductor power conversion devices such as inverters and converters are turned off and / or when they are turned off. . Background technique [0002] Active gate control technology that dynamically controls the gate voltage is used in semiconductor switching elements constituting semiconductor power conversion devices such as inverters and converters. This technology suppresses the peak value during switching operation without the need for a snubber circuit voltage technology. [0003] For example, Japanese Patent Application Laid-Open No. 2001-136732 (hereinafter referred to as Patent Document 1) discloses a semiconductor power conversion device including: applying a forward bias and a reverse bias to the gate Set and set the emitter ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/00H02M1/08
CPCH03K17/166H02M1/08H02M1/44H02M1/32
Inventor 久野裕道广濑敏高松直义辻浩也榊原启之深津一树
Owner TOYOTA JIDOSHA KK
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