Silicon resonation type pressure sensor based on synovial membrane differential structure and manufacturing method thereof

A pressure sensor, resonant technology, applied in the field of sensors, can solve the problems of complex manufacturing process and layout of silicon resonant pressure sensor, achieve the effect of convenient structure and layout design, improve quality factor, and reduce detection difficulty
CN101614604BInactive Publication Date: 2011-01-19NORTHWESTERN POLYTECHNICAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NORTHWESTERN POLYTECHNICAL UNIV
Publication Date
2011-01-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a silicon resonation type pressure sensor based on a synovial membrane differential structure and a manufacturing method thereof, belonging to the technical field of sensors. The silicon resonation type pressure sensor mainly comprises a resonator 2, a strut 1, a pressure sensing membrane 3 and a frame 4, wherein the upper part of the frame 4 is connected with four sides of the pressure sensing membrane 3, and the lower part is provided with a cavity at the place corresponding to the pressure sensing membrane 3 so that tested air gets into contact with the pressure sensing membrane 3 after passing through the cavity. The strut 1 is arranged on the upper surface of the pressure sensing membrane 3, while the resonator 2 is suspended on the upper surface of the pressure sensing membrane 3 through the strut 1and the frame 4. The silicon resonation type pressure sensor simplifies the manufacturing process and the layout and reduces the influence of air leakage during packaging to the performance of the sensor; and the adopted differential structure can restrain the common-mode noise and increase the sensitivity, thereby improving the noise-signal ratio of an output signal and lowering the detection difficulty of external circuits.
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Description

1. Technical field

[0001] The invention belongs to the technical field of sensors, in particular to a silicon resonant pressure sensor based on a synovial film differential structure and a manufacturing method thereof. 2. Background technology

[0002] Silicon resonant pressure sensor is one of the pressure sensors with the highest precision at present. It measures pressure indirectly by detecting the natural frequency of the object, and outputs quasi-digital signals. Because its accuracy is mainly affected by the mechanical characteristics of the structure, it has strong anti-interference ability and stable performance. In addition, silicon resonant pressure sensors also have many advantages such as wide frequency bandwidth, compact structure, low power consumption, small size, light weight, and mass production, and have always been the focus of research and development in various countries.

[0003] In terms of research and development of silicon resonant pressure sensors...

Claims

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