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Silicon resonation type pressure sensor based on synovial membrane differential structure and manufacturing method thereof

A pressure sensor, resonant technology, applied in the field of sensors, can solve the problems of complex manufacturing process and layout of silicon resonant pressure sensor, achieve the effect of convenient structure and layout design, improve quality factor, and reduce detection difficulty

Inactive Publication Date: 2011-01-19
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the manufacturing process and layout of the above-mentioned silicon resonant pressure sensor are relatively complicated, and a stable high-vacuum packaging environment must be ensured

Method used

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  • Silicon resonation type pressure sensor based on synovial membrane differential structure and manufacturing method thereof
  • Silicon resonation type pressure sensor based on synovial membrane differential structure and manufacturing method thereof
  • Silicon resonation type pressure sensor based on synovial membrane differential structure and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0043] refer to figure 1 , Figure 5 , the silicon resonant pressure sensor based on the synovial film differential structure in this embodiment mainly includes four parts: a resonator 2, a support column 1, a pressure sensitive diaphragm 3 and a frame 4, wherein the upper part of the frame 4 is connected to the four sides of the pressure sensitive diaphragm 3 Connected, the lower part is formed with a cavity corresponding to the pressure sensitive diaphragm 3, so that the gas to be measured is in contact with the pressure sensitive diaphragm 3 through the cavity. The support column 1 is located on the upper surface of the pressure sensitive diaphragm 3 , and the resonator 2 is suspended on the upper surface of the pressure sensitive diaphragm 3 through the support column 1 and the frame 4 .

[0044] The pressure sensitive diaphragm 3 has a square structure and no silicon islands on the lower surface.

[0045] The support columns 1 are arranged symmetrically on the diagonal of...

Embodiment 2

[0055] refer to figure 1 , Figure 6 In this embodiment, the silicon resonant pressure sensor based on the synovial film differential structure mainly includes four parts: a resonator 2, a support column 1, a pressure sensitive diaphragm 3 and a frame 4, wherein the upper part of the frame 4 is connected to the four sides of the pressure sensitive diaphragm 3 , a cavity is formed at the lower part corresponding to the pressure-sensitive diaphragm 3, so that the gas to be measured is in contact with the pressure-sensitive diaphragm 3 through the cavity. The support column 1 is located on the upper surface of the pressure sensitive diaphragm 3 , and the resonator 2 is suspended on the upper surface of the pressure sensitive diaphragm 3 through the support column 1 and the frame 4 .

[0056] The pressure sensitive diaphragm 3 has a square structure and no silicon islands on the lower surface.

[0057] The support column 1 is symmetrically arranged on the central symmetry axis o...

Embodiment 3

[0067] refer to figure 1 , Figure 7 In this embodiment, the silicon resonant pressure sensor based on the synovial film differential structure mainly includes four parts: a resonator 2, a support column 1, a pressure sensitive diaphragm 3 and a frame 4, wherein the upper part of the frame 4 is connected to the four sides of the pressure sensitive diaphragm 3 , a cavity is formed at the lower part corresponding to the pressure-sensitive diaphragm 3, so that the gas to be measured is in contact with the pressure-sensitive diaphragm 3 through the cavity. The support column 1 is located on the upper surface of the pressure sensitive diaphragm 3 , and the resonator 2 is suspended on the upper surface of the pressure sensitive diaphragm 3 through the support column 1 and the frame 4 .

[0068] The pressure-sensitive diaphragm 3 has a square structure, and the lower surface has polygonal silicon islands.

[0069] The support column 1 is arranged symmetrically on the central symmet...

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Abstract

The invention discloses a silicon resonation type pressure sensor based on a synovial membrane differential structure and a manufacturing method thereof, belonging to the technical field of sensors. The silicon resonation type pressure sensor mainly comprises a resonator 2, a strut 1, a pressure sensing membrane 3 and a frame 4, wherein the upper part of the frame 4 is connected with four sides of the pressure sensing membrane 3, and the lower part is provided with a cavity at the place corresponding to the pressure sensing membrane 3 so that tested air gets into contact with the pressure sensing membrane 3 after passing through the cavity. The strut 1 is arranged on the upper surface of the pressure sensing membrane 3, while the resonator 2 is suspended on the upper surface of the pressure sensing membrane 3 through the strut 1and the frame 4. The silicon resonation type pressure sensor simplifies the manufacturing process and the layout and reduces the influence of air leakage during packaging to the performance of the sensor; and the adopted differential structure can restrain the common-mode noise and increase the sensitivity, thereby improving the noise-signal ratio of an output signal and lowering the detection difficulty of external circuits.

Description

1. Technical field [0001] The invention belongs to the technical field of sensors, in particular to a silicon resonant pressure sensor based on a synovial film differential structure and a manufacturing method thereof. 2. Background technology [0002] Silicon resonant pressure sensor is one of the pressure sensors with the highest precision at present. It measures pressure indirectly by detecting the natural frequency of the object, and outputs quasi-digital signals. Because its accuracy is mainly affected by the mechanical characteristics of the structure, it has strong anti-interference ability and stable performance. In addition, silicon resonant pressure sensors also have many advantages such as wide frequency bandwidth, compact structure, low power consumption, small size, light weight, and mass production, and have always been the focus of research and development in various countries. [0003] In terms of research and development of silicon resonant pressure sensors...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/10G01L9/00B81B7/02B81C1/00B81C3/00
Inventor 任森苑伟政乔大勇王玉朝吕湘连
Owner NORTHWESTERN POLYTECHNICAL UNIV
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