Large area MEMS membrane type gas enricher
A large-area, enricher technology, applied to semiconductor/solid-state device components, instruments, scientific instruments, etc., can solve the problems of mechanical strength that is difficult to support suspended structures, small enrichment area, and unfavorable large airflow.
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[0025] Example 1-Linear
[0026] figure 2 It is a schematic diagram of the structure of a large-area enricher in which the enrichment units are arranged in a straight line. It contains a total of 4 enrichment units. Of course, it can also be composed of more enrichment units. The main structure includes a silicon frame 10, a SiN diaphragm (suspended diaphragm 11), a heating element 12, a silicon frame 13, a selective adsorption film 14, and a glass top cover 15. Generally, about 500 μm thick silicon is used as the substrate. A plasma-enhanced chemical vapor deposition (PECVD) technique is used to prepare a SiN thin film layer (floating diaphragm 11) of about 1 μm on the front surface of the substrate, or a silicon dioxide thin film can be used. Subsequently, four serpentine heating elements 12 were fabricated according to the linear combination design. The heating material is a platinum film with a thickness of about 200nm and a size of 1.8mm×1.8mm, which is deposited by a spu...
Example Embodiment
[0028] Example 2-Side by side
[0029] image 3 A schematic diagram of the structure of a large-area enricher composed of 16 enrichment units, which is equivalent to juxtaposition of 4 rows of linear enrichers, with 4 enrichment units in each column. In order to make the air flow in each column uniform, a gas distribution channel 17 is designed at the air inlet 8 and the air outlet 9 respectively, so that the gas path is divided into two, and then the gas path is divided into four, and the distance of each gas path is equal, so that The 16 enrichment units can evenly contact the gas, ensuring that each enrichment unit has the same adsorption function. The side-by-side combination method has a larger adsorption area than the linear type, and its enrichment rate of DMMP can reach 240.
Example Embodiment
[0030] Example 3-Coiled type 1
[0031] Figure 4 It is a schematic diagram of the structure of a large-area enricher with 16 enrichment units arranged in a serpentine shape. The feature is that a glass grid 16 is etched on the glass top cover 15 so that when the glass top cover 15 and the silicon substrate are bonded together These glass grids 16 form a fixed gas path inside the enricher, so that the gas passes through the 16 enricher units in turn along the curved gas path. The width of the glass grid 16 is about 0.5mm, and the distance between the grids and the edge of the top cover is 3mm. The suction unit is in the middle position between the two grids, and the distance between the two suction units in the same column is The distance is 0.5mm.
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