Slow light edge-emitting laser of photonic crystal chirp waveguide
A technology of edge-emitting lasers and photonic crystal waveguides, applied in the field of semiconductor optoelectronic devices, can solve the problems of low output power, achieve high conversion efficiency, good single-mode characteristics, and improve the effect of laser power
Active Publication Date: 2011-04-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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[0008] In view of this, the main purpose of the present invention is to overcome the shortcoming of low output power of existing photonic crystal edge-emitting lasers, and provide a kind of high-power photonic crystal chirped waveguide slow-light edge-emitting laser to improve the output power of edge-emitting lasers
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[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0035] Please refer to figure 1 , figure 1 It is a structural schematic diagram of a high-power photonic crystal chirped waveguide slow-light edge-emitting laser in the present invention. The laser is designed based on the air-hole photonic crystal triangular lattice and is divided into three parts. The left part is a slow light waveguide structure, which is used to generate laser light. This part consists of a single line-defect waveguide formed by removing a row of air holes in a sound photonic crystal. The right end is the output waveguide structure. In this part, the diameters of the two adjacent rows of air holes inside the waveguide are designed to be slightly smaller than the diameters of the surrounding photoni...
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The invention discloses a slow light edge-emitting laser of photonic crystal chirp waveguide, which consists of an air hole type photonic crystal structure manufactured on a semiconductor chip. The structure is divided into three parts, wherein the left part has a slow light waveguide structure and is used for generating laser; the right end has an output waveguide structure, and the diameters oftwo adjacent rows of air holes inside the output waveguide structure are slightly smaller than the diameters of air holes of peripheral photonic crystals; and a chirp waveguide structure is formed between the slow light waveguide structure and the output waveguide structure, and the diameters of two adjacent rows of air holes inside the chirp waveguide structure gradually reduce from the same size as those of the air holes of the slow light waveguide structure to the same size as those of the diameters of the air holes of the output waveguide structure. The edge-emitting laser provided by theinvention adopts a band edge slow-light mode of the photonic crystal chirp waveguide, breaks through the bottleneck that the volume of a defective cavity mode is limited, and uses the chirp waveguidestructure to efficiently convert the slow light mode into a normal group velocity waveguide module so as to greatly improve the output efficiency of the edge-emitting laser.
Description
technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a suspended thin-plate high-power photonic crystal chirped waveguide slow-light edge-emitting laser. Background technique [0002] Photonic crystals have been attracting people's attention since their concept was proposed. Its unique "Photonic Band Gap" (Photonic Band Gap, PBG) makes it have a special status in the application of lasers, which can suppress the probability of spontaneous emission of photons with frequencies in the band gap. When a certain defect is added to the photonic crystal, a defect state with a narrow bandwidth will appear in the band gap, so that the probability of spontaneous emission to generate photons with a frequency in the defect state is not suppressed, and the spontaneous emission near this frequency is also directed towards this frequency. The probability of transformation enhances the spontaneous emission of defect st...
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IPC IPC(8): H01S5/20H01S5/30H01S5/10
Inventor 郑婉华邢名欣任刚刘安金陈微周文君陈良惠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI