Preparation method of selenide material for absorbing layer of thin film solar cell

A technology of solar cells and selenides, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of unreasonable preparation process design, difficulty in forming integrated alloys, and large density differences. The ratio of elements is easy to control, The effect of low cost and accurate ratio

Active Publication Date: 2010-02-10
有研科技集团有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The melting point, boiling point, and density of the five elements Cu, In, Ga, Al, and Se vary greatly (the melting points are 1083.4°C, 156.6°C, 29.7°C, 660.4°C, and 217°C; the boiling points are 2567°C, 2080°C, 2204°C, 2467°C and 684.9°C; their densities are 8.96g/cm 3 , 7.3g/cm 3 , 5.9g/cm 3 , 4.8g/cm 3 , 2.7g/cm 3 ), especially: Selenium not only has a low boiling point (684.9°C), but also has a high vapor pressure at the boiling point

Method used

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  • Preparation method of selenide material for absorbing layer of thin film solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Put Cu powder and Se block with a purity of 99.995% into an autoclave lined with alumina ceramics in a molar ratio of Cu:Se=2:1 after 400g, and put them into an autoclave lined with alumina ceramics. -3 Close the autoclave under Pa vacuum condition.

[0021] Place the autoclave in a furnace that is cooled by nitrogen circulation and the furnace wall is cooled by circulating water. The temperature in the furnace is constant temperature gradient, that is, the temperature is adjusted to a temperature higher than the melting point of the material at a heating rate of 10°C / min. 1200°C is divided into 5 stages of temperature rise and constant temperature. The temperature of each temperature stage is: the final adjusted temperature higher than the melting point of the material / 5+1, that is, the 5 stages of constant temperature are 200°C, 400°C, 600°C, and 800°C. , 1000°C, and the constant temperature time is 2 hours respectively, and finally adjusted to 1200°C for 2 hours, so ...

Embodiment 2

[0024] Put the Cu powder and Se block with a purity of 99.98% into a reaction kettle lined with alumina ceramics and fill it with 8×10 4 Pa argon to seal the reactor.

[0025] Place the reaction kettle filled with argon in the furnace for gradient temperature rise and constant temperature, that is, at a temperature rise rate of 15°C / min, according to the final temperature adjusted to 1210°C higher than the melting point of the material, it is divided into 5 stages of temperature rise and constant temperature, each temperature The temperature of the section is: -12+℃, the temperature finally adjusted to be higher than the melting point of the material / 5+1, that is, the constant temperature of the five sections are 190℃, 380℃, 570℃, 760℃, 950℃, and the constant temperature time: 2.5 Hours, and finally adjusted to 1210 ° C temperature conditions for 2.5 hours, so that it was slowly cooled to room temperature within 8 hours. The prepared block was taken out from the reactor and t...

Embodiment 3

[0028] Put In block and Se block with a purity of 99.8% into the autoclave lined with zirconia ceramics after the molar ratio of In:Se=2:3 is 500g, at 6.2×10 -3 Close the autoclave under Pa vacuum condition.

[0029] The autoclave closed under vacuum is placed in a furnace cooled by nitrogen circulation, and the furnace wall is cooled by circulating water. The temperature in the furnace is constant temperature gradient, that is, at a heating rate of 20°C / min, according to the final adjustment to a temperature higher than The temperature of the melting point of the material is 950°C, which is divided into 4 stages of temperature rise and constant temperature. The temperature of each temperature stage is: 10°C + the final adjusted temperature higher than the melting point of the material / 4+1, that is, the 4 stages of constant temperature are 200°C and 400°C respectively. °C, 600 °C, 800 °C, the constant temperature time is 3 hours respectively, and finally adjusted to 950 °C tem...

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Abstract

The invention relates to a preparation method of selenide material for the absorbing layer of a thin film solar cell and the selenide material is Cu2Sex and M2Sey, wherein M is one element of Al, In and Ga, x is 0.95-1.05, y is 2.8-3.2 and selenide material is powdered or block target material. The preparation method comprises the following steps: placing a sealed vacuum container or a container filled with argon or nitrogen with the pressure of less than normal pressure in a furnace to perform gradient temperature-elevating and temperature-keeping in a defined heating rate, performing liquidphase cooling to synthesize bulk material after stage temperature-keeping, crushing the bulk material to obtain the desired powder and finally synthesizing the desired bulk target in a hot pressing furnace. The method is a pure element method liquid-phase synthesis technology and has the advantage of wide applicability, accurate proportioning and low cost; the prepared target has high quality andthe consistencies of the powdery material and the bulk target material are separately more than 99.7% and 99.0%.

Description

【Technical field】 [0001] The invention relates to a preparation method of a selenide material for an absorbing layer of a thin-film solar cell, wherein the selenide material is Cu 2 Se x , In 2 Se y , Al 2 Se y , Ga 2 Se y , the value of x is 0.95-1.05, the value of y is 2.8-3.2, and the state of the prepared material is powder or bulk target. 【Background technique】 [0002] CuAlSe 2 , CuInSe 2 , Cu(InGa)Se 2 , Cu(AlGa)Se 2 As a light-absorbing layer, it has the characteristics of anti-radiation and stable performance. It can be prepared into a low-cost solar thin-film battery, which is suitable for civilian use. The current relatively mature method of its preparation generally uses the first sputtering and then the selenization (or vulcanization) process. This method cannot guarantee the uniformity of film composition and thickness, and the selenization process involves highly toxic selenide (or sulfide), which requires high equipment requirements during the prep...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCY02P70/50
Inventor 谢元锋黄小珂吕宏伍祥武王玉民陈进中苏家红何焕全廖春图
Owner 有研科技集团有限公司
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