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Method for preparing aqueous-phase semiconductor nanocrystalline by using ammonia compound for catalysis

A technology for catalytic preparation and semiconductor, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of limiting the scale and practical use of semiconductor nanocrystals, energy consumption, and long reaction time of nanocrystals, so as to shorten the Preparation cycle and energy consumption, effect of high fluorescence quantum efficiency

Inactive Publication Date: 2010-02-17
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the reaction time to generate nanocrystals of a certain particle size is too long, which consumes a lot of energy.
This limits the scale and practicality of semiconductor nanocrystals

Method used

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  • Method for preparing aqueous-phase semiconductor nanocrystalline by using ammonia compound for catalysis
  • Method for preparing aqueous-phase semiconductor nanocrystalline by using ammonia compound for catalysis
  • Method for preparing aqueous-phase semiconductor nanocrystalline by using ammonia compound for catalysis

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1: with Te powder and NaBH 4 Preparation of NaHTe aqueous solution as raw material

[0031] Via Te powder and NaBH 4Reaction to prepare NaHTe aqueous solution: first 0.34g NaBH 4 Fully dissolve in 6mL deionized water, then add 0.51g Te powder, leaving only one pinhole in the reaction system to discharge the hydrogen generated in the system, and react in an ice-water bath for 8 hours to obtain a 0.666mol / L NaHTe aqueous solution.

[0032] 2: with CdCl 2 , NaHTe, and mercaptopropionic acid as raw materials to synthesize CdTe nanocrystal precursor solution

[0033] Add 4×10 to the 20ml reaction system -4 mol of CdCl 2 and 9.6×10 -4 mol of mercaptopropionic acid, adjust the pH to 9.3 with NaOH, and pass N 2 Gas protection; add 0.12mL, 0.666mol / L NaHTe aqueous solution under stirring condition; CdCl 2 , NaHTe, and mercaptopropionic acid in a molar ratio of 1:0.2:2.4, and continued stirring for 10 minutes to obtain a CdTe nanocrystal precursor solution.

[0034] 3: R...

Embodiment 2

[0037] 1: Synthetic NaHTe method is as described in Example 1;

[0038] 2: The method for synthesizing the CdTe nanocrystal precursor solution is as described in Example 1;

[0039] 3: Rapid growth of precursor solution

[0040] Add 1 mL of freshly prepared CdTe precursor solution and 85 wt% N to the 40 mL reaction system 2 h 4 ·H 2 O solution 27.36mL, where Cd 2+ with N 2 h 4 ·H 2 The molar ratio of O is 1:24000. After the solution was placed in the dark at room temperature for 2 hours, if Figure 2(a) , 2(b) As shown, the obtained fluorescent color is yellow (the emission peak is 565nm), and the average particle size is 3.06nm CdTe nanocrystals.

Embodiment 3

[0042] 1: Synthetic NaHTe method is as described in Example 1

[0043] 2: Synthesis of CdTe nanocrystal precursor solution method as described in Example 1

[0044] 3: Rapid growth of precursor solution

[0045] Add 1 mL of freshly prepared CdTe precursor solution and 85 wt% N to the 40 mL reaction system 2 h 4 ·H 2 O solution 27.36mL, where Cd 2+ with N 2 h 4 ·H 2 The molar ratio of O is 1:24000. After the solution was kept in the dark at room temperature for 24 hours, if Figure 3(a) , 3(b) As shown, the obtained fluorescent color is orange (emission peak is 597nm), and the average particle size is 3.37nm CdTe nanocrystal.

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Abstract

The invention relates to a method for preparing an aqueous-phase semiconductor nanocrystalline by adding an ammonia compound, in particular to a method for fast and effectively preparing the aqueous-phase semiconductor nanocrystalline, which belongs to the technical field of semiconductor nanocrystalline preparation and comprises the following steps: preparing a water-soluble II-VI group semiconductor nanocrystalline precursor by using sulfydryl micromolecules as a stabilizing agent and adding the simple ammonia compound to grow the nanocrystalline precursor by heating or at room temperature to obtain the aqueous-phase semiconductor nanocrystalline. Raw materials used in a compounding stage of a water-soluble II-VI group semiconductor nanocrystalline precursor solution are cadmium salt, zinc salt, mercuric salt, an ionic type tellurium source, an ionic type selenium source, an ionic type sulfur source and the sulfydryl micromolecules; and after the ammonia compound is added, the nanocrystalline precursor solution can be heated for growth or can be placed away from sunlight at room temperature for growth, and the aqueous-phase semiconductor nanocrystalline with different light-emitting colors can be obtained at different growing time. The invention can fast prepare the clear and transparent II-VI group semiconductor nanocrystalline which has higher light-emitting efficiency withlow energy consumption.

Description

technical field [0001] The invention belongs to the technical field of preparing semiconductor nanocrystals, in particular to a method for preparing water-phase semiconductor nanocrystals by adding ammonia compounds, in particular to a method for preparing water-soluble II-VI group semiconductor nanocrystals by using mercapto small molecules as stabilizers Precursors and nanocrystal precursors are added with simple ammonia compounds and grown under the conditions of heating or room temperature, so as to quickly and effectively prepare water-phase semiconductor nanocrystals. Background technique [0002] Because of the quantum size effect, semiconductor nanocrystals can be widely used in many fields, such as light-emitting diodes, lasers, sensors, bioluminescence marks, anti-counterfeiting marks, etc. Therefore, it has become the focus of many researchers. With the continuous development, the preparation method of nanocrystals is also constantly updated and optimized. Compa...

Claims

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Application Information

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IPC IPC(8): C30B7/14C30B29/48C09K11/56C09K11/88
Inventor 张皓韩吉姝周鼎杨柏
Owner JILIN UNIV
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