Optical pumping vertical external cavity emitting laser with gradient band gap barrier absorption layer

Abstract

The invention discloses an optical pumping vertical external cavity emitting laser with a gradient band gap barrier absorption layer, which is characterized by comprising a copper heat sink, a transparent heat sink, an epitaxial wafer, a pumping light source and an external cavity mirror, wherein the copper heat sink is provided with a groove; the upper surface of the transparent heat sink is evaporated with an anti-reflection film; the epitaxial wafer is connected with the lower surface of the transparent heat sink by adopting a liquid adsorption method, and the connected transparent heat sink and the epitaxial wafer are fixedly connected with the copper heat sink by a solder to accommodate the epitaxial wafer in the groove; the pumping light source at certain angle to an axis is arranged on one side of the upper surface of the transparent heat sink; and the external cavity mirror is positioned at the axis above the transparent heat sink, and the concave surface of the external cavity mirror is plated with a reflection film.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to an optically pumped vertical external cavity surface-emitting laser with a gradient bandgap potential barrier absorption layer. Background technique [0002] Vertical external cavity surface-emitting laser is a kind of surface-emitting laser. It is a new type of device in semiconductor laser technology. , medical and national defense engineering and other fields have broad application prospects. In particular, it is easy to frequency double and form a two-dimensional array, which can achieve high-power laser output with high beam quality. These advantages make it very popular in the fields of industrial processing, solid-state laser and fiber laser pumping, and crystal frequency doubling. development prospects. [0003] Compared with solid-state lasers, edge-emitting semiconductor lasers, and vertical-cavity surface-emitting lasers, vertical external-cavity surface...

AI Technical Summary

Problems solved by technology

Third, for small-sized (<10μm) vertical cavity surface-emitting semiconductor lasers, although the output beam is an ideal single-mode circular beam, the power is limited to about 10mW

[0006] In summary, the current high-power laser technology has the following problems, namely, first, solid-state lasers are large in size, high in cost, and low in conversion efficiency; second, the beam quality of edge-emitting semiconductor lasers is generally poor, and the shaping system is complicated and difficult to manufacture; third, The single-mode output power of ordinary vertical cavity surface emitting lasers is too low; Fourth, especially the previous optically pumped vertical external cavity surface emitting lasers are difficult to achieve high-power laser output due to thermal saturation

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