Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention relates to a trench gate metal oxide semiconductor field effect transistor and a manufacturing method thereof. The method comprises the following steps: manufacturing a first conductiveepitaxial layer on a silicon substrate; manufacturing a plurality of trenches on the epitaxial layer; performing overall ion implantation of a first conductive doping material on the epitaxial layer;manufacturing a polysilicon pattern layer covering the trenches and the epitaxial layer in a preset range around the trenches; implanting a second conductive doping material on the epitaxial layer through the polysilicon pattern layer; importing a doping material to form a well area having the second conductive doping material; implanting the first conductive doping material in the well area through the polysilicon pattern layer to form a plurality of first doped areas; implanting the doping material of the first doped areas to form source electrode doped areas close to the trenches; and removing the polysilicon pattern layer above the epitaxial layer to form a polysilicon gate. The method can improve the depth distribution of the sell area of the trench gate metal oxide semiconductor field effect transistor and avoiding the effectiveness loss caused by the coverage of the gate trenches by the well area.

Description

technical field [0001] The invention relates to a metal oxide semiconductor field effect transistor (MOS) structure and a manufacturing method thereof, in particular to a method for avoiding well coverage by improving the depth distribution of the well area of ​​the trench gate metal oxide semiconductor field effect transistor The structure and fabrication method of a trench-gate metal-oxide-semiconductor field-effect transistor (Trench MOS) in which the transistor fails due to the bottom of the gate trench. Background technique [0002] In order to meet the needs of energy saving and system power loss reduction, higher energy conversion efficiency is required. These design specification requirements that keep pace with the times will become increasingly severe challenges for power converter designers. To meet this demand, new power components play an increasingly important role in high-efficiency converters. Among them, power metal oxide semiconductor field effect transist...

AI Technical Summary

Problems solved by technology

In the traditional manufacturing process of metal oxide semiconductor field effect transistors, the concentration of the P-type dopant is relatively high at the two sides 122b adjacent to the gate trench 130. Therefore, the P-type well region 122 is formed when the dopant is introduced. During the process, the bottom of the gate trench 130 is easily covered by the P-type well region 122, resulting in transistor failure

[0011] Therefore, how to improve the depth distribution of the well region of the metal oxide semiconductor field effect transistor and avoid the failure of the transistor caused by the well region covering the bottom of the gate trench is an urgent goal pursued by practitioners in this field.

[0012] It can be seen that the above-mentioned existing trench gate metal-oxide-semiconductor field-effect transistor and its manufacturing method obviously still have inconvenience and defects in terms of product structure, manufacturing method and use, and need to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

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