Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of inorganic nanometer materials and polythiophene derivant composite materials

A technology of inorganic nanomaterials and polythiophene derivatives, applied in the field of composite materials and preparations of inorganic nanomaterials and polythiophene derivatives

Inactive Publication Date: 2010-03-17
BEIJING UNIV OF CHEM TECH
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it uses physical spin coating method to form a film, and does not form a chemical compound of titanium dioxide and polythiophene, which leads to the best photoelectric performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of inorganic nanometer materials and polythiophene derivant composite materials
  • Preparation method of inorganic nanometer materials and polythiophene derivant composite materials
  • Preparation method of inorganic nanometer materials and polythiophene derivant composite materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment 1: Nano TiO 2 - Preparation of poly-3-octylthiophene composites

[0047] A. In a glass bottle with a sealed cover, dissolve 1.2g, 0.6g, 0.3g, 0.2g of POT in 30mL, 15mL, 7.5mL, 5mL of chloroform to make a saturated solution, and then make the average particle size 8nm TiO 2 According to POT / TiO 2 Mass ratios of 2:1, 1:1, 1:2, 1:3 are added to the above saturated solution;

[0048] B. Add anhydrous FeCl dropwise according to 4 times the amount of POT material after sealing 3 into the above solution, and stop stirring at room temperature for 8 hours; the resulting mixture is vacuum-removed to remove the solvent, and after drying, POT / TiO 2 Composite materials with mass ratios of 2:1, 1:1, 1:2, and 1:3, respectively.

Embodiment 2

[0049] Embodiment 2: Preparation of nano ZnO-poly 3-octylthiophene composite material

[0050] In a glass bottle with a sealed cover, dissolve 0.2g of 3-octylthiophene in 5mL of chloroform, then add 1g of ZnO with an average particle diameter of 10nm into the solution, seal it and add dropwise to 4% of the amount of monomeric substances. times anhydrous FeCl 3 , Stirring at 0 C for 3 h and then stopping; the resulting mixture was vacuum-removed to remove the solvent, and dried to obtain a nano-ZnO-poly-3-octylthiophene composite material with a mass ratio of 1:5.

Embodiment 3

[0051] Example 3: Preparation of nano ZnO-poly 3-decylthiophene composite material

[0052] In a glass bottle with a sealed cover, dissolve 0.2g of 3-decylthiophene in 5mL of chloroform, then put 1g of ZnO with an average particle size of 10nm into the solution, seal it and add dropwise the amount of monomeric substance 4 times the amount of anhydrous FeCl 3 , Stirring at 10° C. for 12 h and then stopping; the resulting mixture was vacuum-removed to remove the solvent, and dried to obtain a nano-ZnO-poly-3-decylthiophene composite material with a mass ratio of 1:5.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of inorganic nanometer materials and polythiophene derivant composite materials, comprising the steps: mixing the polythiophene derivant monomer with the inorganic nanometer materials; and under the existence of catalyst, carrying out oxidation polymerizing at the temperature of -5 DEG C to 30 DEG C. By using the method, the polythiophene derivant and the nanometer inorganic materials can be effectively composited, so that the nanometer inorganic materials are dispersed into the molecule intervals of the polythiophene derivant, packed by the molecules, and mutually acted. The ultraviolet visible absorption peak of the composite materials is obviously red shifted, the whole ultraviolet and visible absorption zone is covered by a luminous range, and the light absorption performance is greatly improved. Furthermore, the composite materials overcome the defects of an n-type semiconductor and a p-type semiconductor, thus greatly improving the electrical conductivity in the whole scan voltage range. The composite materials are expected to be practically used in photoelectric devices and solar cells.

Description

technical field [0001] The invention relates to a composite material of an inorganic material and an organic semiconductor material and a preparation method thereof, in particular to a composite material of an inorganic nanometer material and a polythiophene derivative and a preparation method thereof. Background technique [0002] Organic-inorganic composite materials are research hotspots in recent years, and their specific and excellent properties have attracted more and more attention. At present, organic-inorganic composite materials have become one of the most promising and fastest-growing branches in the field of material chemistry. The heterogeneity of the spatial position and the dissimilarity of the properties of each component make this kind of composite materials have distinctive structural characteristics, physical properties and complex functions. It can be applied in many technical fields, optoelectronic materials, solid electrolytes, coating processes, senso...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08G61/12C08K3/22C08K3/08C08K3/24C08K3/30
Inventor 张敬畅韩志跃曹维良
Owner BEIJING UNIV OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com