Warm white light light-emitting diode (LED) and lithium matter fluorescent powder thereof

A light-emitting diode, warm white light technology, applied in the directions of luminescent materials, chemical instruments and methods, sustainable buildings, etc., can solve the problems of uneven luminous brightness and luminous color of light-emitting diodes, a large amount of blue light radiation, lack of covering layers, etc.

Inactive Publication Date: 2010-04-14
罗维鸿
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] Although this architecture has been widely used, it cannot be ignored that it also has some substantial disadvantages: the layer 7 of phosphor particles with uneven concentration in the polymer will lead to uneven brightness and color of light-emitting diodes ; the lack of a capping layer at the radiative edge of a nitride semiconductor heterojunction 1 leads to a large amount of blue radiation
In particular, this color is like the color of a human face. It looks comfortable under incandescent lighting, but the color tone under fluorescent lighting is unnatural, which is really a fly in the ointment.

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  • Warm white light light-emitting diode (LED) and lithium matter fluorescent powder thereof
  • Warm white light light-emitting diode (LED) and lithium matter fluorescent powder thereof
  • Warm white light light-emitting diode (LED) and lithium matter fluorescent powder thereof

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Embodiment Construction

[0035] First of all, the object of the present invention is to eliminate the above-mentioned disadvantages of warm white light-emitting diodes. In order to achieve this goal, the warm white light emitting diode of the present invention has a structure similar to figure 1 The structure described in , so it will not be further illustrated here, is based on an indium gallium nitride heterojunction, and its composition contains a large number of quantum wells. It has a polymerized light-emitting conversion layer, which is characterized in that: the polymerized The luminescence conversion layer exists in the form of uniform concentration. The luminescent surface and edge of the indium gallium nitride heterojunction are covered with a thermosetting polymer layer, and the polymerized luminescence conversion layer contains a number of phosphor particles. These particles are composed of at least two layers. The particle layer exists in the polymerized light-emitting conversion layer to...

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Abstract

The invention relates to a warm white light light-emitting diode (LED) and lithium matter fluorescent powder thereof, wherein the lithium matter fluorescent powder is used in the warm white light LED, adopts oxides of Ith and IIIth main group elements in a periodic table of elements as a matrix, and takes elements with transition in electron d layer and f layer as activation elements; the matrix of the fluorescent powder is formed by solid solutions of similar aluminates of lithium and yttrium, with the chemical formula of Li alpha (Gd1-xYx) 3AI5 plus alpha O12 plus 2 alpha: TR; and when the matrix is activated by short wave radiation, ion of the activation element can give off yellow orange light which is mixed with short wave radiation emitted by InGaN semiconductor heterojunction to form the warm white light. The warm white light LED uses the fluorescent powder to ensure that partial transmission can reach 15 to 30 percent of first-level blue light radiation of the InGaN semiconductor heterojunction, and 70 to 85 percent of the second orange-yellow radiation. In addition, the invention also discloses a preparation method of the fluorescent powder.

Description

technical field [0001] The invention relates to a fluorescent powder and a warm white light emitting diode thereof, in particular to a fluorescent powder capable of obtaining high luminous efficiency and a warm white light emitting diode thereof. Background technique [0002] Light-emitting diodes came out in 1965, when engineers developed the first light-emitting diode devices based on GaAs (gallium arsenide). This is a low-power light-emitting diode with a luminous flux F≤0.01 lumens that emits light in the red area. In the 1970s and 1980s, the development of light-emitting diodes was very slow. By the early 1990s, the luminous flux of better green light-emitting diodes did not exceed 0.1-0.3 lumens. [0003] Since 1968, phosphors and phosphor-based spectral conversion structures have been widely used in light-emitting diode technology. What first appeared was a conversion device that increases the luminous frequency, and converts the near-infrared luminescence of GaAsP ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/00C09K11/80
CPCY02B20/181Y02B20/00
Inventor 纳姆·索辛罗维鸿
Owner 罗维鸿
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