Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of gallium arsenide/gallium antimonide solar battery

A technology of solar cells and manufacturing methods, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of high power ratio per unit weight and high cost, and achieve the effects of long life, large absorption coefficient, and strong radiation resistance

Inactive Publication Date: 2012-05-23
YUNNAN NORMAL UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The patent (application number: 200510084937.2) uses high-quality GaSb and GaAs single wafers as raw materials to make GaSb / GaAs mechanical laminated batteries, but because it requires high-quality GaSb and GaAs bulk materials, the cost is high and the power ratio per unit weight is large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of gallium arsenide/gallium antimonide solar battery
  • Manufacturing method of gallium arsenide/gallium antimonide solar battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0016] Including the following steps:

[0017] (1) Put the no-clean N + -GaAs single wafer substrate is placed on the sample holder of a molecular beam epitaxy (MBE) growth chamber, deoxidizes at a high temperature at 580℃, and the temperature of the GaAs substrate is increased to 630℃ for high temperature degassing, and then the substrate temperature is reduced to 580 ℃, open the shutters of Ga and As source furnaces to do doped n + -GaAs buffer layer growth, doping concentration is n + 3~5×10 18 ; Molecular beam epitaxial growth chamber at n + The GaAs layer is in a vacuum state before growth, and the pressure is 5×10 -9 mbar; molecular beam epitaxial growth chamber at n + During the growth of the GaAs buffer layer, the pressure of the molecular beam epitaxial growth chamber is 5~8×10 -8 mbar; n + The growth thickness of the GaAs buffer layer is 500 nm.

[0018] (2) Close the shutter of the Ga and As source furnace, lower the temperature of the single wafer substrate to 450°C, ope...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a manufacturing method of a gallium arsenide / gallium antimonide solar battery, comprising the following steps: a gallium arsenide single crystal is used as a substrate, and sub battery adsorptive layers are grown on the gallium arsenide substrate by utilizing the molecular beam epitaxy (MBE) growth technology; special processes include: (A) a GaAs buffering layer is grown on the GaAs substrate at 580 DEG C; (B) a GaSb layer is grown on the GaAs buffering layer at 450 DEG C; (C) a top electrode is manufactured on the GaAs layer, and a back electrode is manufactured on the GaSb layer; (D) the battery manufacturing is carried out, and the battery is packed to obtain finished product.

Description

Technical field [0001] The invention relates to a manufacturing method of a gallium arsenide / gallium antimonide solar cell. In particular, it relates to a manufacturing method of a III-V semiconductor material solar cell. Background technique [0002] With the depletion of fossil energy and the increasing global warming, the use of solar energy is receiving more and more attention. Solar cells are the core devices that convert solar energy into electrical energy. High-efficiency solar cells have important applications in aerospace and space exploration. The large-scale application of low-cost and high-efficiency solar cells can alleviate the energy crisis, reduce greenhouse gas emissions, and benefit future generations. Therefore, high-efficiency solar cell technology has always been a research field supported by countries, especially developed countries. [0003] At present, high-efficiency solar cells for space use include GaSb / GaAs mechanical stacked cells, GaInP / GaAs cells,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 郝瑞亭杨培志申兰先邓书康涂洁磊廖华
Owner YUNNAN NORMAL UNIV