Method for detecting relaxation time of carrier on optically activated deep level for mercury cadmium telluride material

A technology of mercury cadmium telluride and carriers, applied in the direction of transmittance measurement, etc., can solve the problem that the deep energy level cannot be provided independently and separately, and achieve the effect of optimizing design and performance improvement, and simplifying the process steps

Inactive Publication Date: 2010-05-12
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As an electrical method, it gives the electrical characteristics of the deep energy level, and cannot independently and s

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting relaxation time of carrier on optically activated deep level for mercury cadmium telluride material
  • Method for detecting relaxation time of carrier on optically activated deep level for mercury cadmium telluride material
  • Method for detecting relaxation time of carrier on optically activated deep level for mercury cadmium telluride material

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0012] The specific embodiments of the present invention will be further described in detail below with reference to examples and drawings.

[0013] Using picosecond pump-detection system, such as figure 1 Shown. The laser pulse is 1064nm laser output by the Nd:YAG laser, the pulse duration is 30ps, and the repetition frequency is 10Hz. The output light is split into two beams through the beam splitting lens (BS1), and one beam is incident on the sample through the variable delay line and lens L3 as the probe light. Another beam of transmitted light passes through the beam splitter lens (BS2) to split a beam of reference light, and the rest is focused on the sample by lens L4 as pump light. By adjusting the angles of the Glan prism and the polarizer, the intensity ratio of the pump light to the probe light can be adjusted to approximately 10:1. Adjust the collimation of the light path so that the pump light and the probe light coincide on the sample and the probe light spot d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for detecting the relaxation time of a carrier on an optically activated deep level for a mercury cadmium telluride material by using pulse laser pumping-detecting experiment. In the pulse laser pumping-detecting experiment for the mercury cadmium telluride material, a photon-generated carrier excited by the pump light pulse is captured by the deep level first, and then, the photon-generated carrier gradually returns to the equilibrium state by compounding. In the process, since the carrier at the upper part of the deep level is excited again by the detection light pulse to enter a conduction band, a large amount of detection photons are absorbed, the transmission intensity of the detection light is less than the transmission intensity without adding the pump light, and an absorption valley with a negative value appears in a delay variation curve of the relative transmission intensity. The negative relative transmittance is gradually close to zero to return to the situation of the equilibrium state, and the returning time course reflects the variation of the concentration of the carrier on the deep level and embodies the relaxation time of the non-equilibrium carrier on the deep level. The value of the relaxation time can be extracted by theoretical fitting.

Description

technical field [0001] The invention relates to a detection technology for the characteristics of semiconductor thin film materials, in particular to a method for detecting the relaxation time of carriers on the optically activated deep energy level of mercury cadmium telluride thin film materials by means of a pulsed laser pumping-detection experiment. Background technique [0002] Mercury cadmium telluride (HgCdTe) infrared detectors have important application value in military and aerospace fields. Although the preparation technology of HgCdTe materials is becoming more and more mature, the HgCdTe thin film materials grown by molecular beam epitaxy still inevitably have defects, which form deep energy levels in the energy gap. Due to the existence of deep-level defects, the minority carrier lifetime and electrical noise of the device are affected, which also affects the performance of the device and limits its application. Therefore, it is particularly important to study...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N21/59
Inventor 陆卫马法君李志锋陈效双李宁陈路何力陈平平李天信
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products