Doping method and doping device of pulling reincorporation antimony crystals

Abstract

The invention relates to a doping method and a doping device of pulling reincorporation antimony crystals. The doping device comprises a quartz cover and a small quartz crucible, the small quartz crucible containing dopant antimony is hung in the quartz cover, and the bottom of the small quartz crucible is provided with a small hole. By adopting the doping device, the dopant antimony is effectively doped to a silicon melt when silicon materials are melted, the splash of dopant antimony is effectively controlled in the quartz cover at the moment of flowing into melting silicon in the doping process, the damage to hearth atmosphere is avoided, and the problem that the dopant antimony is difficult to be doped into the silicon materials because of the splash caused by violent reaction is effectively solved. Because the doping time is short, the influence of evaporation of dopant is reduced. The reaction of the doping process is stable and controllable, the weight of the dopant can be accurately set, and the consistence of the dopant can be effectively controlled. The efficiency for doping the antimony is enhanced, the cost of the dopant is saved, and the crystallization rate of the reincorporation antimony crystals is enhanced at the same time, thereby meeting the needs of domestic and international markets for the reincorporation antimony crystals.

Description

technical field [0001] The invention relates to a production method of a silicon single crystal, in particular to a doping method and a doping device of a Czochralski re-doped antimony single crystal. Background technique [0002] As we all know, there are three kinds of dopants commonly used in heavily doped single crystals as semiconductor materials, namely phosphorus, antimony and arsenic. Arsenic and its compounds are toxic, and are rarely used by single crystal manufacturers due to their high protection cost and environmental protection issues; phosphorus, as a conventional dopant, has a large diffusion coefficient, and after heavy doping, There are unfavorable aspects for the processing of subsequent products; therefore, only antimony is used as a dopant, which shows better advantages. Although antimony has unique advantages as a dopant, it is also because of its special physical Chemical properties, conventional doping methods (1. The method of co-melting the dopant ...

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Problems solved by technology

[0004] 1. At the moment when the dopant antimony flows into the molten silicon after melting, due to the large difference in melting point, it reacts violently with the silicon liquid, causing splashes and destroying the furnace atmosphere, which will affect the crystallization rate of crystals, resulting in low crystal yields. high cost

[0005] 2. The generated splash causes the splashed dopant not to be effectively mixed into the silicon melt, resulting in waste of dopant

[0006] 3. The resulting splash causes the splashed dopant not to be effectively incorporated into the silicon melt, resulting in inaccurate doping amount, which may easily lead to deviations in the resistivity of the growing crystal, or even fail to reach the required resistivity range. Doping efficiency is not high

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