Preparation method of high-efficiency composite catalyst film for overlength carbon nano tube growth
A technology of ultra-long carbon nanotubes and composite catalysts, applied in chemical instruments and methods, physical/chemical process catalysts, metal/metal oxide/metal hydroxide catalysts, etc., can solve the problem of reduced catalyst activity and low growth rate of CNTs and other problems, to achieve the effect of preventing aggregation, low preparation cost and high efficiency
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Embodiment 1
[0018] The silicon substrate (out-of-plane orientation (111) or (100)) was ultrasonically cleaned with acetone, ethanol and deionized water, then dried with a nitrogen gun, and immediately placed in the reaction chamber of the reactive magnetron sputtering device. Ensure that the absolute pressure of the back of the reaction chamber before deposition is lower than 5×10 -3 Pa. Metal Fe and Mg targets with a purity better than 99.99wt% are used as sputtering targets, high-purity Ar gas and O with a purity better than 99.99% 2 as the sputtering atmosphere. Ar and O 2 After the gas is fully mixed, it is introduced into the reaction chamber through the catheter, Ar gas and O 2 The flow ratio of gas is controlled at 4 (Ar gas is 10-100sccm, O 2 5-50sccm), after the substrate temperature is heated to 200°C, the sputtering gas is introduced into the reaction chamber to the deposition chamber. The vertical distance between the material and the substrate is 100mm, and the thickness...
Embodiment 2
[0020] The silicon substrate (out-of-plane orientation (111) or (100)) was ultrasonically cleaned with acetone, ethanol and deionized water, then dried with a nitrogen gun, and immediately placed in the reaction chamber of the reactive magnetron sputtering device. Ensure that the absolute pressure of the back of the reaction chamber before deposition is lower than 5×10 -3 Pa. Use metal Fe and Al targets with a purity better than 99.99wt% as sputtering targets, high-purity Ar gas and O with a purity better than 99.99% 2 as the sputtering atmosphere. Ar and O 2 After the gas is fully mixed, it is introduced into the reaction chamber through the catheter, Ar gas and O 2 The flow ratio of gas is controlled at 8 (Ar gas is 10-50sccm, O 2 2-20sccm), after the substrate temperature is heated to 700°C, the sputtering gas is introduced into the reaction chamber to the deposition chamber. The vertical distance between the material and the substrate is 50mm, and the thickness of the...
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