A kind of preparation method of three-dimensional photonic crystal

Abstract

A method for preparing a three-dimensional photonic crystal, using silicon dioxide or silicon nitride as a mask layer, transferring the desired pattern on the mask layer to the silicon substrate material by oxygen ion implantation, and forming the first photonic crystal in the silicon substrate A layer of silicon dioxide structure, then epitaxial single crystal silicon and planarization of the surface of the epitaxial layer, deposition of mask layer, photolithography, oxygen ion implantation and annealing to form the second layer of silicon dioxide structure, repeat the above steps n times , until the three-dimensional photonic crystal structure needed to complete the design is constructed. The method is fully compatible with semiconductor technology, can prepare large-area three-dimensional photonic crystals, and can be cut into smaller sizes according to needs, has the advantages of high efficiency and low cost, and has broad application prospects in optoelectronic integrated devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and relates to a preparation method of a photonic crystal, in particular to a preparation method of a three-dimensional photonic crystal. Background technique [0002] Compared with electrons, photons have a faster speed and have almost no interaction. As the integration of electronic devices at the nanoscale becomes more and more difficult, photonic devices based on photon motion, especially photonic crystals, which can control photons The emergence of new structural materials for motion has brought people the hope of overcoming the "electronic bottleneck". Due to the potential advantages of photonic crystals in self-radiation suppression, waveguides and integrated optical circuits, it is expected to be widely used in future optoelectronic integrated devices in order to produce products with smaller size, higher integration and faster processing speed. [0003] A photonic crys...

AI Technical Summary

Problems solved by technology

Among them, the mechanical processing method is time-consuming and laborious, and the method is relatively rough, which was only adopted in the early attempts; the layer-by-layer superposition method uses a relatively mature semiconductor technology and is one of the core methods for preparing photonic crystals. There are great difficulties in this method, and the cost of this method is too high and the time-consuming is too long; the colloidal self-organization method is also one of the commonly used methods for preparing photonic crystals at present. It has unparalleled advantages, but there are not many lattice structures that can be formed, and it is difficult to avoid polycrystalline generation, interlayer dislocation and structural collapse; multi-beam interferometry is another new method for preparing photonic crystals. Forming a periodic structure can not only generate a large number of periods, but also ensure the uniformity of the structure. By controlling the incident angle, beam intensity, polarization direction and phase of the laser beam, it can provide more degrees of freedom in the design of the lattice structure type, but At present, suitable holographic recording materials are limited, and practical near-infrared three-dimensional photonic crystals have not yet been prepared, and multi-beam interferometry cannot manufacture three-dimensional photonic crystals with all structures

Images