Chip scale package structure of CMOS (complementary metal-oxide-semiconductor) image sensor and packaging method

Abstract

The invention discloses a chip scale package structure of a CMOS (complementary metal-oxide-semiconductor) image sensor and a packaging method. The chip scale package structure of the CMOS image sensor comprises a photoelectric conversion layer, a pixel element array, a connection layer, an adhesion layer, a photic zone, a wiring layer, a connection pad, a separating layer, and solder joints, wherein the pixel element array is positioned on the photoelectric conversion layer; the connection layer is positioned on the photoelectric conversion layer for separating the pixel element array and is higher than a pixel element; the adhesion layer is positioned on the surfaces of a micro lens and the connection layer, and the photic zone is positioned on the adhesion layer; the pixel element area forms a cavity; the wiring layer is positioned on the surface opposite to the surface located by the photoelectric conversion layer and the pixel element array; the connection pad is discreted on the wiring layer; the separating layer is positioned on the wiring layer and exposes the connection pad; and the soldering spots are positioned on the connection pad. The invention effectively improves the performance and the integration level of a device.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a chip-level packaging structure and packaging method of a CMOS image sensor. Background technique [0002] At present, charge coupled device (CCD) is the main practical solid-state image sensor device. It has the advantages of low reading noise, large dynamic range, and high response sensitivity. However, CCD also has the advantages of complementary metal oxide semiconductor ( Complementary-Metal-Oxide-Semiconductor (CMOS) technology is compatible, that is, it is difficult to realize single-chip integration for CCD-based image sensors. [0003] CMOS image sensor (CMOS Image sensor, CIS) is produced to overcome the complexity and high energy consumption of charge coupled device (CCD) manufacturing process. CMOS manufacturing technology is applied, and the number corresponds to the number of unit pixels in the semiconductor substrate. MOS transistor. Because CIS adopts C...

AI Technical Summary

Problems solved by technology

For high-pixel CMOS sensors, the number of connection lines is huge, and the use of solder technology not only affects the freedom of the entire connection line layout, but also makes it difficult to reduce the package area, which cannot meet the requirements of device integration and miniaturization

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