Silicon-based thin film solar cell with microcrystalline silicon-germanium thin film as intrinsic layer and preparation method thereof

Abstract

The invention discloses a silicon-based thin film solar cell with a microcrystalline silicon-germanium thin film as an intrinsic layer, which comprises a transparent substrate, a transparent conductive thin film, a P-shaped window layer, an intrinsic layer I, an N+ layer, a back reflection electrode and a metal electrode, wherein the intrinsic layer is the microcrystalline silicon-germanium thin film. The preparation method of the microcrystalline silicon-germanium thin film comprises the following steps of: (1) placing a glass substrate with the transparent conductive film into a vacuum chamber, wherein the base vacuum is higher than 2*10-4Pa; and (2) under the condition of introducing reactant gas silane, germane, fluorogermanate and hydrogen in a reaction chamber, precipitating the microcrystalline silicon-germanium thin film. The invention has the advantages that the silicon-based thin film cell has novel structure, the prepared microcrystalline silicon-germanium thin film material has the advantages of narrow band gap, low defect, high photosensitivity, simple process, easy operation, and low manufacturing cost, and the silicon-based thin film cell adopting the material can improve the spectral response range, stability and conversion efficiency.

Description

【Technical field】 [0001] The invention relates to the technical field of solar cells in new energy sources, in particular to a silicon-based thin-film solar cell whose intrinsic layer is a microcrystalline silicon-germanium thin film and a preparation method thereof. 【Background technique】 [0002] Energy is the driving force for the development of a country. In an era when fossil energy is becoming increasingly exhausted, research on new alternative energy will be a guarantee for the sustainable development of the national economy and a symbol of national strength. [0003] Looking at the object used by solar cells - the spectrum of sunlight, it has less than 50% of the energy in the visible light part. To increase the efficiency of the cell, it is important to extend its spectral response below 1.1 microns, since this includes more than 90% of the energy of sunlight. Germanium is a narrow-bandgap semiconductor material with a bandgap of 0.66ev. It is difficult to form a ...

AI Technical Summary

Problems solved by technology

Studies have shown that compared to SiH 4 In terms of GeH 4 It is easy to decompose and can be quickly integrated into the film, but there is a problem that H atoms are preferentially bonded to Si in the plasma, which makes the structure of the film with Si and Ge neighbors respectively inconsistent, and the structural order is not uniform, so the high germanium content A large number of defect states are more likely to appear in the thin film, which affects the performance of the device when applied to the battery

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