109results about How to "Reduce photosensitivity" patented technology

An image capturing lens assembly includes, in order from an object side to an image side: the first lens element with positive refractive power, the second lens element with refractive power, the third lens element with positive refractive power, the fourth lens element with refractive power, the fifth lens element with refractive power, and the sixth lens element with refractive power, at least one surface of the sixth lens element thereof being aspheric and having at least one inflection point. By such arrangement, total track length and the photosensitivity of the image capturing lens assembly can also be effectively reduced while retaining high image quality.

An image lens assembly includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The first lens element with positive refractive power has a convex object-side surface. The second lens element has positive refractive power. The third lens element has refractive power. The fourth lens element has refractive power. The fifth lens element with negative refractive power has a concave object-side surface, wherein both of the surfaces of the fifth lens element are aspheric. The sixth lens element with refractive power has a concave image-side surface, wherein the image-side surface thereof has at least one inflection point, and both of the surfaces of the sixth lens element are aspheric. The image lens assembly has a total of six lens elements with refractive power.

An electrophotographic photosensitive member exhibiting a good durability and stable electrophotographic performances regardless of environmental change is provided by coating the photosensitive layer with a specific protective layer. The protective layer comprises a cured phenolic resin and a charge-transporting compound having at least one group selected from the group consisting of hydroxyalkyl groups, hydroxyalkoxy groups and hydroxyphenyl groups capable of having a substituent.

A grey tone display and a driving method are described. The display comprises a light influencing layer, an electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected to the electrode pad at its source terminal, a p-channel field effect transistors connected to the electrode pad at its source terminal, a first control line connected to the drain terminal of the n-channel field effect transistor, a second control line connected to the drain terminal of the p-channel field effect transistor, a third control line connected to the gate terminals of the n-channel field effect transistor and the p-channel field effect transistor, and a control circuit for supplying control signals to the first, second and third control lines. By this configuration, the voltage of the electrode pad can be arbitrarily controlled by adjusting the input level at the gate terminals.

A compound represented by the following formula (1) or (2):

An image lens system includes, in order from an object side to an image side, a first lens element with negative refractive power including a concave image-side surface; a second lens element with positive refractive power including a convex object-side surface; a third lens element with negative refractive power including an object-side surface and a concave image-side surface, the object-side surface and the image-side surface being aspheric; a fourth lens element with positive refractive power including a convex object-side surface and a convex image-side surface; and a fifth lens element with negative refractive power including a convex object-side surface and a concave image-side surface, the object-side surface and the image-side surface being aspheric, the fifth lens element having at least one inflection point.

It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.

A bumping process is disclosed. The bumping process comprises the steps of: providing a wafer having a plurality of bonding pads and a passivation layer, wherein the passivation layer exposes the bonding pads; forming an UBM layer over the wafer to cover the bonding pads; forming two or more photoresist layers over the wafer, wherein the photoresist layers have different exposure and development characteristics; forming at least one or more stair-shaped openings in the photoresist layers by a single exposure corresponding to the bonding pads; filling solder into the stair-shaped openings to form a plurality of solder bumps; removing the entire photoresist layer. The bumping process can provide bumps with higher heights, so that the connection between chips and carriers becomes more reliable.

An optical moulding process is disclosed comprising the sequential steps of: (a)(y) forming a layer of a photocurable composition; and (bXz) irradiating selected areas of the composition in the layer with radiation from a radiation source, thereby curing the composition in said selected areas and repeating the steps a) and b) on top of an earlier cured layer to form a three dimensional structure, wherein the radiation source used in step b) is a non-coherent source of radiation and wherein the photocurable composition comprises at least two curable components: (i) 45%-95% (and preferably at least 50%, more preferably at least 60%, e.g. at least 70%) by weight of the total curable components in the composition is a first component that is photocurable and that is such that, when cured in the presence of a photocuring initiator by exposure to UV radiation having an energy of 30 mJ / cm2, at least 90% of the component is cured within 50 milliseconds; and (ii) 5% to 55% (and preferably 10-40%, more preferably 15 to 30%, e.g. about 20%) by weight of the total curable components in the composition is a second component that results in the composition, on curing, shrinking, in a linear direction, by less than 3% and preferably that results in the composition having, after cure, a Tg of greater than 50° C., preferably at least 100° C. and more preferably at least 120° C.