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Preparation method for silicon-based solar energy thin film

A solar thin-film, silicon-based technology with applications in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc.

Inactive Publication Date: 2011-04-06
NAN AN SANJING SOLAR POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main weakness of the industrial competitiveness of epitaxial thin-film silicon solar cells is that compared with traditional bulk silicon solar cells, the efficiency of thin-film silicon solar cells is lower. Large-scale industrial production must be considered
But the polysilicon purity after general directional solidification is 4-5N (99.99%-99.999%wt), especially wherein B content is high and causes resistivity low, attenuation is serious, can not satisfy the needs of solar energy industry, the present invention is exactly aimed at this technology Improvements made to the problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1: Put 4-5N silicon wafers into the substrate fixture; put 150Kg of In as a solvent into the graphite crucible; vacuumize the furnace chamber and introduce inert gas, and turn off the vacuum pump at the same time to maintain a slight positive pressure.

[0033] Step 2: heat up to the melting point of In above 200°C, after melting In, put the substrate holder loaded with the silicon wafer into the In melt;

[0034] Step 3: Gradually raise the temperature to 900°C to dissolve the silicon wafer; control the temperature and time to melt the required thickness of the silicon wafer;

[0035] Step 4: Lower the temperature by 0.2-1°C / h, the silicon in the melt is precipitated, and re-grows on the substrate silicon wafer; after 10-20 hours, slowly lift the substrate holder out of the liquid surface, and take out the silicon wafer after cooling.

Embodiment 2

[0037] Step 1: Put 4-5N silicon wafers into the substrate fixture; put 200Kg of In as a solvent into the graphite crucible; vacuumize the furnace chamber and introduce inert gas, and turn off the vacuum pump at the same time to maintain a slight positive pressure.

[0038] Step 2: heat up to the melting point of In above 300°C, melt the In, and put the substrate holder loaded with the silicon wafer into the In melt;

[0039] Step 3: Gradually raise the temperature to 900°C to dissolve the silicon wafer; control the temperature and time to melt the required thickness of the silicon wafer;

[0040] Step 4: Lower the temperature by 0.2-1°C / h, the silicon in the melt is precipitated, and re-grows on the substrate silicon wafer; after 10-20 hours, slowly lift the substrate holder out of the liquid surface, and take out the silicon wafer after cooling.

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PUM

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Abstract

A preparation method for a silicon-based solar energy film and relates to the liquid phase epitaxy technology. The preparation method comprises the following steps: firstly, dissolving In, then placing a substrate clamp provided with a substrate silicon wafer into the In, raising the temperature, controlling the dissolved amount of the silicon wafer in the solvent by controlling the speed and time of the temperature raising, beginning to reduce the temperature after dissolving 30 mum-40 mum of silicon wafer, silicon atoms dissolved in the In epitaxially growing on the silicon wafer owing to the reduction of the solubility; after 10-20h, slowly lifting the silicon wafer carrier from the liquid level and taking out the silicon wafer after cooling. The preparation method is adopted for obtaining the 6N silicon wafer by the epitaxial growth of 4-5N substrate silicon wafer.

Description

Technical field [0001] The present invention is a semiconductor material and solar cell material field, involving a method of preparing a silicon -based solar film. Background technique [0002] Silicon solar cells based on single crystals or polycrystal silicon bases are the main body of the photovoltaic market.However, if all high -purity silicon is made, the production of solar batteries is very energy -consuming and more expensive.In order to further promote the development of the photovoltaic industry, the production cost of solar cells should be vigorously reduced by reducing the cost of material costs. [0003] In order to save materials, people have stitched polysilicon film on cheap substrates from the mid -1970s, but due to the size of the growth of silicon membrane grains, it was not able to make valuable solar cells.In order to obtain a large -sized grain film, people have not stopped research and have proposed many methods.At present, the polysilicon thin -film batte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C30B28/04
CPCY02P70/50
Inventor 张伟娜郑智雄南毅马殿军王致绪邹予赵志跃徐诗双洪朝海戴文伟
Owner NAN AN SANJING SOLAR POWER