Preparation method of sapphire doping agent

Abstract

The invention discloses a preparation method of a sapphire doping agent, which is characterized in that the method comprises the following steps: respectively adding ammonium ferric sulfate powder and ammonium fluotitanate powder into pure water for preparing a solution with the ammonium ferric sulfate content between 0.005 and 0.01 g / ml and the ammonium fluotitanate content between 0.0005 and 0.001 g / ml; mixing and stirring the solution and the ammonium aluminum sulfate powder according to the volume to weight ratio of 14 to 15 ml / kg; then, maintaining the constant temperature for 60 to 90 minutes after mixed materials are heated to 200 DEG C, and carrying out dewatering treatment; maintaining the temperature for 100 to 120 minutes after the materials are heated to 900 DEG C, and carrying out deamination and desulfurization treatment to obtain target products. The sapphire doping agent of the invention is suitable for being used as raw materials of growing sapphire by a flame method, a pulling method and the like, and the grown monocrystals can be used as high-quality windows, high-precise components and the like.

Description

technical field [0001] The invention relates to the field of sapphire production, in particular to a method for preparing a sapphire dopant. Background technique [0002] Sapphire crystal (α-Al 2 o 3 Single crystal) is a simple coordination oxide crystal, belonging to the hexagonal crystal system, space group D6 3 d2 R3 mc, which has a series of unique physical, mechanical and thermal properties, and stable chemical properties. It is a refractory oxide crystal with a high melting point (2050°C) and a crystal hardness of 9.0Mohs. Al 2 o 3 The crystal has high optical transmittance from vacuum ultraviolet, visible, near-infrared to mid-infrared 5.5μm. Compared with many other optical window materials, it has better mechanical and physical properties, such as high hardness and high tensile strength. Strength, erosion resistance, thermal conductivity, mechanical stability and significant thermal shock resistance, etc. It has been widely used in infrared military equipment,...

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Problems solved by technology

However, due to the entry of elements such as iron and titanium into the crystal lattice, the density of single crystal sapphire increases, and the lattice structure is further changed. During the condensation process, it is easy to cause uneven distribution of impurities and form color spots. The quality of the crystal has a greater influence on the

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