Preparation method of sapphire doping agent

A dopant, sapphire technology, applied in the directions of diffusion/doping, chemical instruments and methods, crystal growth, etc., can solve the problems of increased density of single crystal sapphire, uneven distribution of impurities, and influence on crystal quality, reaching a wide market and applicability, high purity, low cost effect

Active Publication Date: 2010-07-14
通辽精工蓝宝石有限公司
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Problems solved by technology

However, due to the entry of elements such as iron and titanium into the crystal lattice, the density of single crystal sapphire increases, and the lattice structure is further

Method used

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  • Preparation method of sapphire doping agent
  • Preparation method of sapphire doping agent
  • Preparation method of sapphire doping agent

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Embodiment Construction

[0019] The preparation method of sapphire dopant:

[0020] Add high-purity ferric ammonium sulfate powder and high-purity ammonium fluorotitanate powder into pure water, mix and dissolve to form a solution, the content of ferric ammonium sulfate in the solution is 0.005-0.01g / ml, and the content of ammonium fluorotitanate is 0.0005- 0.001g / ml, then add aluminum ammonium sulfate powder into the solution and mix and stir, the ratio of solution to aluminum ammonium sulfate powder is 10-15ml: 1Kg, then heat to 200°C, keep the temperature for 80-100min for dehydration reaction, and heat up to 900°C , constant temperature 110-120min for deamination, desulfurization reaction, and then get the product.

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Abstract

The invention discloses a preparation method of a sapphire doping agent, which is characterized in that the method comprises the following steps: respectively adding ammonium ferric sulfate powder and ammonium fluotitanate powder into pure water for preparing a solution with the ammonium ferric sulfate content between 0.005 and 0.01 g/ml and the ammonium fluotitanate content between 0.0005 and 0.001 g/ml; mixing and stirring the solution and the ammonium aluminum sulfate powder according to the volume to weight ratio of 14 to 15 ml/kg; then, maintaining the constant temperature for 60 to 90 minutes after mixed materials are heated to 200 DEG C, and carrying out dewatering treatment; maintaining the temperature for 100 to 120 minutes after the materials are heated to 900 DEG C, and carrying out deamination and desulfurization treatment to obtain target products. The sapphire doping agent of the invention is suitable for being used as raw materials of growing sapphire by a flame method, a pulling method and the like, and the grown monocrystals can be used as high-quality windows, high-precise components and the like.

Description

technical field [0001] The invention relates to the field of sapphire production, in particular to a method for preparing a sapphire dopant. Background technique [0002] Sapphire crystal (α-Al 2 o 3 Single crystal) is a simple coordination oxide crystal, belonging to the hexagonal crystal system, space group D6 3 d2 R3 mc, which has a series of unique physical, mechanical and thermal properties, and stable chemical properties. It is a refractory oxide crystal with a high melting point (2050°C) and a crystal hardness of 9.0Mohs. Al 2 o 3 The crystal has high optical transmittance from vacuum ultraviolet, visible, near-infrared to mid-infrared 5.5μm. Compared with many other optical window materials, it has better mechanical and physical properties, such as high hardness and high tensile strength. Strength, erosion resistance, thermal conductivity, mechanical stability and significant thermal shock resistance, etc. It has been widely used in infrared military equipment,...

Claims

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Application Information

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IPC IPC(8): C30B31/00
Inventor 罗平
Owner 通辽精工蓝宝石有限公司
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