Growth method for obtaining high aluminium component Al-Ga-N alloys by improving aluminium doping efficiency

A growth method and technology of aluminum gallium nitride, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effects of excellent quality, suppression of surface cracks, and excellent luminous performance

Inactive Publication Date: 2010-07-14
NANJING UNIV
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Problems solved by technology

[0006] The problem to be solved by the present invention is: to grow Al with high quality and high Al composition x Ga 1-x There are great difficulties in N thin film materials, and it is necessary to pr

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  • Growth method for obtaining high aluminium component Al-Ga-N alloys by improving aluminium doping efficiency
  • Growth method for obtaining high aluminium component Al-Ga-N alloys by improving aluminium doping efficiency
  • Growth method for obtaining high aluminium component Al-Ga-N alloys by improving aluminium doping efficiency

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[0022] The technical solution of the present invention is to use MOCVD in α-Al 2 O 3 The AlGaN alloy film is epitaxially grown on the substrate, with metal organic sources TMAl and TMGa as the III source, NH 3 As a source of V family, H 2 As a carrier gas:

[0023] Use AlN as the buffer layer. The growth temperature of the AlN buffer layer is 600 to 1000°C, and the growth thickness is from 10 to 100 nm. After the growth of the AlN buffer layer is completed, the temperature of the reaction chamber is increased to 1100-1150°C to continue growing Al x Ga 1-x N alloy film layer;

[0024] Or use thick GaN as the support layer, first grow a layer of GaN on the substrate as the support layer, the thickness of the GaN support layer is 2-5μm, the growth temperature is 1050°C, and then the MOCVD reaction chamber temperature is set to 700 to 1000°C, Grow an AlN insertion layer with a thickness of 10-100nm. After the AlN insertion layer has grown, increase the temperature to 1100-1150℃ to grow ...

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Abstract

A growth method for obtaining high aluminium component Al-Ga-N alloys by improving aluminium doping efficiency is characterized by adopting MOCVD to epitaxially grow an AlxGa1-xN film alloy layer on the alpha-Al2O3 substrate, adopting an AlN buffer layer or insert layer to prevent crack on the film layer and realizing adjustment of the Al component in AlxGa1-xN by controlling the mole ratio of Al/Ga, wherein the number x of Al atoms is not less than 0 and not more than 0.8, and the control method of the Al component is as follows: keeping certain molar weight of the injected Al and reducing the mole ratio of Ga to Al from 5.8 to 0.46. The method has the following advantages: the AlxGa1-xN alloy can be obtained, the number x of Al atoms in the alloy is as high as 0.8, and the Al doping efficiency is improved by 9%; the Al-Ga-N film has excellent quality, the full-width at haft-maximum (FWHM) of the typical X-ray rocking curve of AlxGa1-xN (0002) is less than 300 seconds of arc; the luminescent property is excellent and the cathodoluminescence spectra show remarkably strong band-edge luminescence peaks; and the surface is smooth and flat and the typical roughness (RMS) is less than 0.8nm.

Description

technical field [0001] The invention relates to a growth technology of metal organic chemical vapor phase epitaxy (MOCVD), in particular to a method for preparing an Al-GaN alloy thin film with high Al composition applied to an ultraviolet detection optoelectronic device in the solar blind zone, specifically a method for improving the efficiency of aluminum doping A growth method for obtaining an AlGaN alloy with a high aluminum composition. Background technique [0002] When the ultraviolet rays emitted by the sun radiate to the earth through the atmosphere, after the sunlight is absorbed and attenuated by the atmosphere, especially the ozone layer, there is a spectral blind area of ​​solar radiation in the ground and near-earth atmosphere, and the spectral region where the ultraviolet rays of solar radiation are absorbed by the atmosphere is called It is the blind area of ​​the sun (the atmosphere absorbs 200-300nm ultraviolet light). Due to the existence of solar blind s...

Claims

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Application Information

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IPC IPC(8): H01L21/205H01L31/09
Inventor 刘斌张荣谢自力李亮修向前华雪梅赵红陈鹏陈敦军陆海韩平郑有炓
Owner NANJING UNIV
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