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GaN-based vertical structure light-emitting diode and preparation method thereof

A technology of light-emitting diodes and vertical structures, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as increasing technical difficulty, and achieve the effects of improving electrical performance, simplifying manufacturing processes, and increasing surface electron concentration

Inactive Publication Date: 2013-03-20
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These requirements undoubtedly increase the technical difficulty of device fabrication

Method used

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  • GaN-based vertical structure light-emitting diode and preparation method thereof
  • GaN-based vertical structure light-emitting diode and preparation method thereof
  • GaN-based vertical structure light-emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1) Put the no-clean (0001) sapphire substrate into the reaction chamber, 2 Under the atmosphere, heat to 1050°C and bake for 20 minutes, cool down to 500°C to nitride the substrate for 150s, and the pressure of the reaction chamber is 50 Torr.

[0047] 2) Grow a GaN buffer layer with a thickness of 15nm at 500°C, the growth pressure is 200Torr, the flow rate of carrier gas is 10L / min, the flow rate of TMGa is 20μmol / min, NH 3 The flow rate is 80mol / min; then the temperature is raised to 1030°C and kept for 15min to recrystallize the GaN buffer layer.

[0048] 3) Grow the first silicon-doped GaN layer of 0.1 μm at 950 ° C, the growth pressure is 100 Torr, the flow rate of carrier gas is 5 L / min, the flow rate of TMGa is 80 μmol / min, NH 3 The flow rate is 120μmol / min, SiH 4 The flow rate is 0.2nmol / min.

[0049] 4) Then grow the n-AlGaN / n-InGaN superlattice layer for 5 cycles by lowering the temperature, wherein the n-AlGaN layer growth temperature is 800°C, the growth...

Embodiment 2

[0057] 1) Put the no-clean (0001) sapphire substrate into the reaction chamber, 2 Under the atmosphere, heat to 1100°C and bake for 15 minutes, then lower the temperature to 900°C to nitride the substrate for 100s, and the pressure of the reaction chamber is 50 Torr.

[0058] 2) Grow a GaN buffer layer with a thickness of 25nm at 530°C, the growth pressure is 300Torr, the flow rate of carrier gas is 15L / min, the flow rate of TMGa is 50μmol / min, NH 3 The flow rate is 100mol / min; then the temperature is raised to 1040° C. and kept for 10 minutes to recrystallize the GaN buffer layer.

[0059] 3) Grow the first silicon-doped GaN layer of 0.2 μm at 1000 ° C, the growth pressure is 150 Torr, the flow rate of carrier gas is 15 L / min, the flow rate of TMGa is 300 μmol / min, NH 3 The flow rate is 300μmol / min, SiH 4 The flow rate is 1 nmol / min.

[0060] 4) Then grow the n-AlGaN / n-InGaN superlattice layer for 6 cycles by lowering the temperature, wherein the growth temperature of the ...

Embodiment 3

[0068] 1) Put the no-clean (0001) sapphire substrate into the reaction chamber, 2 Under the atmosphere, heat to 1150°C and bake for 10 minutes, then lower the temperature to 700°C to nitride the substrate for 120s, and the pressure of the reaction chamber is 50 Torr.

[0069] 2) Grow a GaN buffer layer with a thickness of 20nm at 550°C, the growth pressure is 500Torr, the flow rate of carrier gas is 20L / min, the flow rate of TMGa is 100μmol / min, NH 3 The flow rate is 110mol / min; then the temperature is raised to 1040° C. and kept for 10 minutes to recrystallize the GaN buffer layer.

[0070] 3) Grow the first silicon-doped GaN layer of 0.15 μm at 1050 ° C, the growth pressure is 200 Torr, the flow rate of carrier gas is 10 L / min, the flow rate of TMGa is 200 μmol / min, NH 3 The flow rate is 400μmol / min, SiH 4 The flow rate is 1.5 nmol / min.

[0071] 4) Then grow 8 cycles of n-AlGaN / n-GaN superlattice layer, where the n-AlGaN layer growth temperature is 1030°C, the growth thic...

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Abstract

A GaN-based vertical structure light-emitting diode (LED) and a preparation method thereof relate to an LED. The vertical structure comprises a sapphire substrate, a low-temperature GaN buffer layer, a first Si-doped GaN layer, 5-10 periods of n-InGaN / n-AlGaN or n-AlGaN / n-GaN superlattice layer, a second Si-doped GaN layer, 5 periods of fixed or gradient component InGaN / GaN quantum-well, an Mg-doped AlGaN layer, an Mg-doped GaN layer, 5 periods of p-InGaN / p-AlGaN superlattice layer and a p-InGaN cover layer from bottom to top. The preparation method comprises the following steps: placing the sapphire substrate in a reaction chamber, performing heat processing and nitridation processing to the substrate in turn, successively growing the GaN buffer layer to the p-InGaN cover layer, and annealing to obtain the GaN-based vertical structure LED.

Description

technical field [0001] The invention relates to a light-emitting diode, in particular to a light-emitting diode with a GaN-based vertical structure of the third-generation compound semiconductor material. Background technique [0002] As we all know, GaN-based blue, purple, and blue-green light-emitting diodes have been widely used in many fields due to their long life, low power consumption, and small size, such as large-area full-color flat panel displays, instrument lights, blue-green traffic lights, etc. Lamps and various lighting equipment, etc. ([1].Masayoshi Koike, Naoki Shibata, Hisaki Kato, et al.Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications[J].IEEEJournal on Selected Topics in Quantum Electronics, 2002, 8(2): 271-277). Since GaN belongs to the hexagonal crystal structure, and the growth temperature is high and lacks a bulk substrate, GaN thin films and related III-nitride semiconductor materials are usually...

Claims

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Application Information

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IPC IPC(8): H01L33/04
Inventor 刘宝林李晓莹
Owner XIAMEN UNIV
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