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Thin film transistor and manufacturing method thereof

A technology of thin-film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems that the leakage current cannot be effectively solved, and achieve the effect of improving reliability and suppressing leakage current

Inactive Publication Date: 2010-08-04
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in Figure 1C thin film transistors, the problem of leakage current still cannot be effectively solved

Method used

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  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof

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no. 1 example

[0045] Figure 2A to Figure 2H It is a schematic cross-sectional view of the manufacturing process of the thin film transistor according to the first embodiment of the present invention. Please refer to Figure 2A , the manufacturing method of the thin film transistor 220 of this embodiment includes the following steps. First, the gate 222 is formed on the substrate 210, and the gate 222 can be fabricated through the first photolithography process (1 st Photolithography and Etch Process, 1 stPEP) formed. Wherein, the material of the substrate 210 can be inorganic transparent materials (such as glass, quartz, other suitable materials and combinations thereof), organic transparent materials (such as polyolefins, polyols, polyalcohols, polyesters, rubber, thermoplastic polymers, etc.) thermosetting polymers, polyaromatic hydrocarbons, polymethylmethacrylates, polycarbonates, other suitable materials, derivatives of the above and combinations thereof), inorganic opaque materi...

no. 2 example

[0053] Figure 3A to Figure 3I It is a schematic cross-sectional view of the manufacturing process of the thin film transistor according to the second embodiment of the present invention. Please refer to Figure 3A , the manufacturing method of the thin film transistor 320 of this embodiment includes the following steps. Firstly, a layer 322 is formed on the substrate 310, wherein the material of the buffer layer 322 can be a dielectric material such as silicon oxide or silicon nitride.

[0054] Please refer to Figure 3B to Figure 3D , and then, on the buffer layer 322, a channel material layer 324, an ohmic contact material layer 326, and a patterned photoresist layer 328 are sequentially formed, wherein the material of the channel material layer 324 can be amorphous silicon or polycrystalline silicon (poly-Si ). Similarly, using the patterned photoresist layer 328 as a mask, pattern the channel material layer 324 and the ohmic contact material 326 layer to form the chan...

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Abstract

The invention discloses a thin film transistor and a manufacturing method thereof. The thin film transistor comprises a channel layer, an ohmic contact layer, a dielectric layer, a source electrode, a drain electrode, a grid electrode and a grid insulation layer, wherein the channel layer has an upper surface and a side face; the ohmic contact layer is arranged on partial area of the upper surface of the channel layer; the dielectric layer is arranged on the side face of the channel layer, and the dielectric layer is not overlapped with the ohmic contact layer; the source electrode and the drain electrode are arranged on partial areas of the ohmic contact layer and the dielectric layer, and partial areas of the dielectric layer are not covered by the source electrode and the drain electrode; the grid electrode is positioned above or under the channel layer; and the grid insulation layer is arranged between the grid electrode and the channel layer.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor and its manufacturing method. Background technique [0002] In recent years, with the increasing maturity of optoelectronic technology and semiconductor manufacturing technology, flat-panel displays have flourished. Among them, liquid crystal displays have gradually replaced traditional cathodes based on their advantages of low-voltage operation, no radiation scattering, light weight, and small size. Ray tube displays have become the mainstream of display products in recent years. In general, liquid crystal displays can be classified into two types: amorphous silicon thin film transistor liquid crystal displays and low temperature poly-silicon thin film transistor liquid crystal displays. [0003] Figure 1A It is a schematic cross-sectional view of an existing thin film transistor. Please refer to Figure 1A , the thin f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786
Inventor 沈光仁陈培铭陈俊雄黄伟明
Owner AU OPTRONICS CORP