Method of plasma treatment and plasma treatment apparatus
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Publication Date
- 2010-08-18
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
Plasma treatment method and plasma treatment apparatus technical field The present invention relates to a plasma processing method and a plasma processing apparatus for performing predetermined plasma processing on a substrate to be processed. Background technique In general, in the manufacturing process of semiconductor devices, film formation, etching, heat treatment, modification, crystallization, etc. Various processes, thereby forming a desired semiconductor integrated circuit. Among the above-mentioned various treatments, for example, in the etching treatment process, a plasma etching treatment method (for example, refer to Patent Document 1) is often used, that is, a predetermined etching gas is used as a processing gas from a shower head disposed on the upper part of the processing chamber. The etching gas is introduced into the processing chamber, and the etching gas is converted into plasma by high-frequency power or the like, and the plasma is applied to the s...