Method of plasma treatment and plasma treatment apparatus

Abstract

In the plasma treatment by an electrically negative gas, the in-plane uniformity of plasma treatment is enhanced over the prior art by controlling the ion density in the plasma. Not only is a treating gas being an electrically negative gas introduced from a treating gas source (170) into a treatment chamber (102) but also an electrically negative gas greater in electron attachment coefficient than the treating gas is introduced as an addition gas from an addition gas source (180) to thereby form a plasma. In the plasma formation, the ion density in the plasma is controlled by regulating the flow rate of the addition gas relative to the treating gas.

Description

Plasma treatment method and plasma treatment apparatus technical field The present invention relates to a plasma processing method and a plasma processing apparatus for performing predetermined plasma processing on a substrate to be processed. Background technique In general, in the manufacturing process of semiconductor devices, film formation, etching, heat treatment, modification, crystallization, etc. Various processes, thereby forming a desired semiconductor integrated circuit. Among the above-mentioned various treatments, for example, in the etching treatment process, a plasma etching treatment method (for example, refer to Patent Document 1) is often used, that is, a predetermined etching gas is used as a processing gas from a shower head disposed on the upper part of the processing chamber. The etching gas is introduced into the processing chamber, and the etching gas is converted into plasma by high-frequency power or the like, and the plasma is applied to the s...

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Problems solved by technology

However, when an electronegative gas such as the above-mentioned fluorocarbon-based gas is used as the processing gas, it is known that the ion density in the plasma tends to be partially biased regardless of where it is introduced from within the processing chamber. Tends to be an obstacle to the goal of further improving in-plane uniformity

That is, in the case of using an electronegative gas as the processing gas, the ion density in the plasma of the processing gas cannot be controlled only by changing the flow rate and concentration from different parts of the processing chamber to introduce the processing gas. There is a limit to the aspect of improving in-plane uniformity

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