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Piezoresistive sensor chip and manufacture method thereof

A technology of a piezoresistive sensor and a manufacturing method, which is applied in piezoelectric/electrostrictive/magnetostrictive devices, measurement of the property force of piezoresistive materials, instruments, etc., can solve the problem of wasting silicon wafer area and high production cost , easy to produce waste and other problems, to achieve the effect of reducing production cost, low production cost and high utilization rate

Inactive Publication Date: 2015-01-28
淮安纳微传感器有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing bulk silicon pressure sensor chip, the glass substrate needs to be packaged with the upper pressure-sensitive film through a bonding process, which makes the production of this structure difficult, high in production cost, prone to waste, and low in yield; And because the thermal expansion coefficients of silicon and glass do not match, the temperature coefficient of sensitivity and zero output of the pressure sensor processed by the body micromachining are much larger than the pressure sensor processed by the surface micromachining, and its actual error is large and the accuracy is not good. high
[0004] In addition, during the production process of the existing bulk silicon pressure sensor chip, anisotropic wet deep etching must be performed on the back of the silicon wafer to meet the requirements of low-range testing after thinning, which wastes a lot of area on the silicon wafer. Lead to waste of materials, making the production cost high

Method used

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  • Piezoresistive sensor chip and manufacture method thereof
  • Piezoresistive sensor chip and manufacture method thereof
  • Piezoresistive sensor chip and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] a. Carry out standard cleaning on the substrate silicon 3, then rinse with deionized water, dehydrate and dry with a spin dryer. Then, thermally oxidize the treated substrate silicon 3 in an oxidation furnace to form 0.1um SiO on one side. 2 Oxide layer 13.

[0035] b. Lithographic back large film area, etch SiO in the back large film area 2 Oxide layer 13, continue to use TMAH (tetramethylammonium hydroxide) to etch the silicon 1um in the back large film area, rinse with deionized water after cleaning, dry and enter the PECVD (plasma enhanced chemical vapor deposition) furnace to grow 1um PSG (phosphorus-doped low-temperature silicon oxide) is used as the sacrificial layer 14 .

[0036] c. Reverse engrave the back large film area, etch the oxide layer 13 of the non-back large film area, rinse with deionized water after cleaning, dry and enter the LPCVD (low pressure chemical vapor deposition) furnace to grow the bottom polysilicon film 4, the thickness 1um.

[0037...

Embodiment 2

[0043] a. Carry out standard cleaning on the substrate silicon 3, then rinse with deionized water, dehydrate and dry with a spin dryer. Then, thermally oxidize the treated substrate silicon 3 in an oxidation furnace to form 0.5um SiO on one side. 2 Oxide layer 13.

[0044] b. Lithographic back large film area, etch SiO in the back large film area 2 Oxide layer 13, continue to use TMAH (tetramethylammonium hydroxide) to etch the silicon 3um in the back large film area, rinse with deionized water after cleaning, dry and enter the PECVD (plasma enhanced chemical vapor deposition) furnace to grow 3um PSG (phosphorus-doped low-temperature silicon oxide) is used as the sacrificial layer 14 .

[0045] c. Reverse engrave the back large film area, etch the oxide layer 13 of the non-back large film area, rinse with deionized water after cleaning, dry and enter the LPCVD (low pressure chemical vapor deposition) furnace to grow the bottom polysilicon film 4, the thickness 1um.

[0046...

Embodiment 3

[0052] a. Carry out standard cleaning on the substrate silicon 3, then rinse with deionized water, dehydrate and dry with a spin dryer. Then, thermally oxidize the treated substrate silicon 3 in an oxidation furnace to form 1um SiO on one side. 2 Oxide layer 13.

[0053] b. Lithographic back large film area, etch SiO in the back large film area 2 Oxide layer 13, continue to use TMAH (tetramethylammonium hydroxide) to etch the silicon 5um in the back large film area, rinse with deionized water after cleaning, dry and enter the PECVD (plasma enhanced chemical vapor deposition) furnace to grow 5um PSG (phosphorus-doped low-temperature silicon oxide) is used as the sacrificial layer 14 .

[0054] c. Reverse engrave the back large film area, etch the oxide layer 13 of the non-back large film area, rinse with deionized water after cleaning, dry and enter the LPCVD (low pressure chemical vapor deposition) furnace to grow the bottom polysilicon film 4, the thickness 5um.

[0055] ...

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Abstract

The invention relates to a piezoresistive sensor chip which has convenient production, low cost and high yield and precision. The piezoresistive sensor chip comprises a pressure film layer, a substrate, a piezoresistor and a metal lead, wherein the piezoresistor and the metal lead are arranged on the upper surface of the pressure film layer; and the substrate is arranged on the lower surface of the pressure film layer. The piezoresistive sensor chip is characterized in that the substrate is specifically a silicon substrate; the pressure film layer comprises a bottom polycrystalline silicon film and an upper oxidation layer; and the lower surface of the bottom polycrystalline silicon film is arranged on the upper surface of the silicon substrate.

Description

technical field [0001] The invention relates to the field of pressure sensors, in particular to a piezoresistive sensor chip, and the invention also provides a manufacturing method for the piezoresistive sensor chip. Background technique [0002] MEMS (micro-mechanical electronics) pressure sensors are one of the earliest products in micro-electro-mechanical systems, and are divided into piezoresistive, capacitive, piezoelectric, etc. according to their working principles. Piezoresistive pressure sensors have been widely used in aerospace, medical equipment, and automotive electronics because of their advantages such as high sensitivity, fast response, good reliability, and easy integration. [0003] In the existing bulk silicon pressure sensor chip, the glass substrate needs to be packaged with the upper pressure-sensitive film through a bonding process, which makes the production of this structure difficult, high in production cost, prone to waste, and low in yield; And b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18B81B7/02B81C1/00G03F7/00
Inventor 沈绍群王树娟周刚陈会林
Owner 淮安纳微传感器有限公司
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