Organic electroluminescent device
An electroluminescence device and electroluminescence technology, which are applied in the directions of electroluminescence light source, electric light source, luminescent material, etc., can solve the problems of improving the luminous efficiency and durability of organic EL devices that have not yet been found.
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Embodiment 1
[0199] An ITO film (thickness 100 nm) was formed as an anode on a support substrate (material: glass), and then a vacuum deposition device (1×10 -6 torr), using 2-TNATA (4,4′,4″-tris(2-naphthylphenylamino)triphenylamine) and F4-TCNQ (tetrafluorotetracyano Quinone dimethane) is co-deposited on it to form a hole injection layer with a thickness of 160nm. Subsequently, (N, N'-dinaphthyl-N, N'-diphenyl-[1,1'-biphenyl Base]-4,4'-diamine) as a hole transport layer with a thickness of 10 nm. The structural formulas of 2-TNATA, F4-TCNQ and NPD are as follows.
[0200]
[0201]
[0202] After the hole transport layer is formed, a light emitting layer is stacked thereon. By using mCP (N,N'-dicarbazolyl-3,5-benzene) as the host material with hole transport properties, Pt-1 as the light-emitting material with electron transport properties (blue light-emitting material) and compound A A light-emitting layer formed as a mixed layer (thickness 60 nm) was co-deposited as an electrical...
Embodiment 2
[0218] A blue light-emitting organic EL device having the same layer composition as in Example 1 was fabricated in the same manner as in Example 1, except that silicon oxide was used (inorganic binder) instead of Compound A (organic binder) used in forming the light-emitting layer of Example 1. The concentration profiles of the respective materials in the emitting layer are shown in Figure 4B . The layer configuration of the light-emitting device, the thickness of each layer, and the like are as follows.
[0219] ITO(100nm) / 2-TNATA+1.0%F4-TCNQ(160nm) / NPD(10nm) / 26%→0%mCP+74%inorganic binder+0%→26%Pt-1(60nm) / BAlq (40nm) / LiF(1nm) / Al(100nm)
[0220] The external quantum efficiency and luminance half-life of the obtained organic EL device were measured under the same conditions as in Example 1 (below, the same), and as a result, 360 cd / m 2 The external quantum efficiency is 12.5%, and the brightness half-life is 1800 hours.
Embodiment 3
[0222] An organic EL device having the same layer configuration and thickness as the organic EL device of Example 1 except for the light-emitting layer was produced. The same materials used in Example 1 were used to form the light-emitting layer, so that the concentration distribution of each material was as follows Figure 4C shown. The layer configuration of the light-emitting device, the thickness of each layer, and the like are as follows.
[0223] ITO(100nm) / 2-TNATA+1.0%F4-TCNQ(160nm) / NPD(10nm) / 100%→0%mCP+74%organic binder+0%→26%Pt-1(60nm) / BAlq (40nm) / LiF(1nm) / Al(100nm)
[0224] The external quantum efficiency and luminance half-life of the organic EL device were measured, and the result was 360cd / m 2 The external quantum efficiency is 13.5%, and the brightness half-life is 2000 hours.
[0225] It is considered that when the concentration of the binder in the light-emitting layer gradually decreases from the cathode side toward the anode side, the luminous e...
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