Frame-type variable capacitor and preparation method thereof

Abstract

The invention discloses a frame-type variable capacitor and a preparation method, which belong to the technical field of micro-electromechanical system MEMS devices. The frame-type variable capacitor is characterized by consisting of three-dimensional comb-tooth-shaped drive electrodes and a three-dimensional comb-tooth-shaped adjustable capacitor and having a bi-directionally movable structure. High-frequency or radio frequency signals can be introduced by elongated and bended cantilever girders on a frame structure of the frame-type variable capacitor, so the rangeability of capacitance is low, while an absolute value is great; and the high-frequency or radio frequency signals can be introduced through a frame on the frame structure of the frame-type variable capacitor, so the rangeability of the capacitance is high, while the absolute value is small. Preferable design parameters of the variable capacitor are disclosed, and correspondingly, the preparation method is disclosed. The preparation method has the advantages of not only finishing control over a capacitance value, but also effectively improving a quality factor Q of the capacitor and the rangeability of the capacitance.

Description

technical field [0001] The invention belongs to the scope of micro-mechanical electronic system (Micro Electro Mechanical System, MEMS) device and its preparation, especially relates to the device based on the existing MEMS manufacturing technology, has high Q value, high capacitance adjustable ratio, frame structure interfinger drive type A micro MEMS variable capacitor and a preparation method thereof. Background technique [0002] In recent years, due to the wide application prospects of MEMS in military and civilian fields including satellite communication, battlefield detection weapon navigation, automotive electronics, etc., the research on MEMS itself has been continuously developed. MEMS devices in the field of high-frequency or radio frequency RF have become one of the hot spots in the development of next-generation radio frequency devices due to their advantages over current traditional devices in terms of size, power consumption, reliability and price. Due to the...

AI Technical Summary

Problems solved by technology

International Business Machines Corporation patent ZL200510008190.2 proposes a multi-layer structure that increases the metal area of ​​the side wall. It has a flat plate-shaped fixed electrode and a comb-shaped movable electrode. It is a multi-layer structure and uses embedded elastic materials. The structure is complicated It is very difficult, the material stress mismatch will cause the structure to warp, the performance p...

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