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The structure of the self-aligned silicide region barrier film and its manufacturing method

A technology of self-aligned silicide and barrier film, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., and can solve problems such as damaging sidewall layers and over-etching semiconductor substrates

Inactive Publication Date: 2014-10-22
SEMICON MFG INT (BEIJING) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] In view of this, the main purpose of the present invention is to provide a structure of a salicide regional barrier film and a manufacturing method thereof, which can effectively solve the problems of STI loss, overheating, etc. Etching the semiconductor substrate and damaging the sidewall layer

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  • The structure of the self-aligned silicide region barrier film and its manufacturing method
  • The structure of the self-aligned silicide region barrier film and its manufacturing method
  • The structure of the self-aligned silicide region barrier film and its manufacturing method

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Embodiment Construction

[0047] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0048] The present invention adopts thinner SRO film to make SAB film, or adopts thinner SRO film and Al deposited on it 2 o 3 Combined to make a SAB film, and remove the SAB film by wet etching.

[0049] A thinner SRO film can reduce the thickness unevenness at Iso and Dense during deposition, and prevent severe STI loss and over-etching of the semiconductor substrate during etching. And thinner SRO film also can reduce the thickness difference that grows on the upper surface of polysilicon grid, sidewall and semiconductor substrate upper surface, prevents when etching SRO film, due to the sidewall SRO film deposition thickness of polysilicon grid is maximum Thin, resulting in etch damage to the sidewall layer. Furthermore, after the SAB film is fo...

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Abstract

The invention discloses a structure of a salicide area barrier film and a preparation method thereof. The preparation method is applied to the preparation process of covering a non-salicide component, and comprises the following steps of: depositing a silicon rich oxide (SRO) film on an active area, a polysilicongate and an isolation area, wherein the deposition thickness is between 50 and 150 angstroms; coating a photoresist on the SRO film, and performing exposure and development on the photoresist to obtain the patterned photoresist; and then etching the SRO film by taking the patterned photoresist as a mask. The structure comprises the SRO film with the thickness of between 50 and 150 angstroms. The invention also discloses the structure of the salicide area barrier film and the preparation method thereof. By using the structure and the preparation method thereof, the problems of STI loss, excessive etching of a semiconductor substrate and damage to a side wall layer when the salicide area barrier film is etched can be solved effectively.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing process, in particular to a structure of a self-aligned silicide region barrier film and a manufacturing method thereof. Background technique [0002] At present, with the development of semiconductor devices, such as the development of metal oxide semiconductor field effect transistors (MOSFET), self-aligned metal silicides such as self-aligned nickel silicon, titanium silicon methods are introduced to produce silicide , can be well aligned with the exposed source, drain and silicon (Si) of the polysilicon gate. This is because metal Ni or Ti can react with silicon, but not with silicon oxides such as silicon dioxide (SiO 2 ), silicon nitride such as silicon nitride (Si 3 N 4 ) or silicon oxynitride (SiON) reaction. Therefore, Ni or Ti will only find the part of silicon to react, and for silicon oxides such as silicon dioxide (SiO 2 ), silicon nitride such as silicon nitr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316H01L21/311H01L23/52
CPCH01L2924/0002
Inventor 李敏吴永玉
Owner SEMICON MFG INT (BEIJING) CORP