Slightly alkaline sapphire polishing solution and preparation method thereof

A technology of polishing liquid and sapphire, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of unsuitable cleaning process, high solid content, easy hardening, etc., achieve high polishing efficiency, high dilution ratio, and improve cutting rate.

Active Publication Date: 2010-10-27
江苏集萃中以科技产业发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sapphire polishing liquid currently on the market has a high solid content and low efficiency. It is easy to harden during the polishing process and is easy to dry on the sapphire surface, which is not suitable for the subsequent cleaning process.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Weigh 100 grams of silica sol with a particle size of about 15 nm and a solid content of 30%, add it to 882 grams of water, and stir evenly at room temperature. Then add 5.0 grams of potassium citrate and stir evenly. Continue to add 8.0 grams of silane polyglycol ether. Finally, the pH was adjusted to 9.5 with potassium carbonate, and 1000 grams of polishing liquid was prepared.

[0018] The prepared samples were polished on a Logitech CDP single-side polisher. Down pressure: 2psi, rotation speed of the lower plate and carrier plate is 50RPM, flow rate of polishing liquid: 100ml / min. The polishing rate of the polishing liquid was 31.2 nm / min. There is no deposition on the surface of the polishing machine and the polished product.

Embodiment 2

[0020] Weigh 50 grams of silica sol with a particle diameter of about 50 nanometers and a solid content of 50%, add it to 1822 grams of water, and stir evenly at room temperature. Then add 2 grams of tetramethylammonium hydroxide, and stir further. Continue to add 1.5 g of polyethylene glycol ether. Finally, the pH was adjusted to 7.5, 8.2, 8.8, 9.5, and 10.5 with potassium carbonate. Be respectively made into five parts of polishing liquid 1900 grams.

[0021] The prepared samples were polished on a Logitech CDP single-side polisher. Down pressure: 2psi, rotation speed of the lower plate and carrier plate is 50RPM, flow rate of polishing liquid: 100ml / min. The polishing rates of the polishing liquid are respectively 72.9, 103.1, 88.3, ​​66.2 and 39.8 nanometers / min at pH 7.5, 8.2, 8.8, 9.5 and 10.5. There is no deposition on the surface of the polishing machine and the polished product.

Embodiment 3

[0023] Weigh 150 grams of silica sol with a particle diameter of about 50 nanometers and a solid content of 50%, add it to 1722 grams of water, and stir evenly at room temperature. Then add 0.5 gram of tetramethylammonium chloride and 1 gram of potassium citrate, and stir evenly. Continue to add 1 g of polyethylene glycol ether. Finally, the pH was adjusted to 8.5 with copper sulfate, and 1900 grams of polishing liquid was prepared.

[0024] The prepared samples were polished on a Logitech CDP single-side polisher. Down pressure: 2psi, rotation speed of the lower plate and carrier plate is 50RPM, flow rate of polishing liquid: 100ml / min. The polishing rate of the polishing liquid was 97.9 nm / min. There is no deposition on the surface of the polishing machine and the polished product.

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Abstract

The invention provides a slightly alkaline sapphire polishing solution and a preparation method thereof, which relates to the field of sapphire polishing technology. The method comprises the following steps: firstly, suspending nano-silica sol particles of which the particle diameters are 3-300nm in water; adding a complexing agent into the suspension; then, adding a surfactant; and finally, regulating the pH value of the suspension to 7-9.5. The method of the invention is simple and reasonable, easy production and good product stability. The product has high dilution rate, high polishing efficiency, good and strong stability and easy production and can not deposit on the surfaces of polishing machines and polishing materials easily; and because of unique fluid property, the product can not be air-dried on the surface of sapphire easily after being polished, thereby greatly reducing the burden of the subsequent cleaning processes. Different from the traditional sapphire polishing solution, the product of the invention has the advantage that under the condition of regulation of a reasonable formula, the polishing and cutting rate of sapphire increases when the pH (10.5) decreases.

Description

technical field [0001] The invention relates to the technical field of sapphire polishing, in particular to the polishing liquid technology for surface fine polishing. Background technique [0002] The sapphire fine polishing liquid currently on the market mainly uses silica sol as a polishing abrasive. Under the alkaline material, the water and silicon oxide of the silica sol form aluminum silicate with the surface of the sapphire, and the hard sapphire is cut and polished with the help of mechanical force. The sapphire polishing fluid currently on the market has a high solid content and low efficiency. It is easy to harden during the polishing process, and it is easy to air dry on the sapphire surface, which is not suitable for the subsequent cleaning process. The cutting rate of traditional sapphire polishing fluid increases with the increase of pH. Contents of the invention [0003] The purpose of the present invention is to invent a high-efficiency and high-precisio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 孙韬
Owner 江苏集萃中以科技产业发展有限公司
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