Abrupt-junction voltage stabilizing diode made of polysilicon and manufacture process thereof
A Zener diode and manufacturing process technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that Zener diodes cannot meet the requirements of high-standard users, and the reverse breakdown leakage current is large, and achieve Small impedance, small reverse breakdown leakage current, good effect
Inactive Publication Date: 2012-06-27
TIANSHUI TIANGUANG SEMICON
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Problems solved by technology
[0004] At present, the zener diode products available on the market are all produced by diffusion process or epitaxial process. Since the PN junction obtained by these two conventional processes is not the ideal abrupt junction required by the zener diode, the reverse breakdown leakage current is relatively large. , so the Zener diodes produced by these two processes cannot meet the requirements of high-standard users
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[0019] The present invention will be further described below in conjunction with the drawings.
[0020] Reference figure 1 , figure 2 , A Zener diode with abrupt junction made of polysilicon. On the N-type substrate polishing sheet 3, a PN junction guard ring 6 is first made, and the N-type substrate polishing sheet 3 in the PN junction guard ring 6 The same layer of polysilicon 1 is deposited on the surface and the inner half of the PN junction guard ring 6 to form a Zener diode with a structure of a common PN junction diode and an abrupt junction diode in parallel.
[0021] A manufacturing process of using polysilicon to make a sudden junction Zener diode, the specific steps of the manufacturing process are:
[0022] ① On the surface of the polished N-type substrate 3 with a resistivity of 1~300mΩ·cm, a 1.6±0.05um oxide layer 2 is made by thermal oxidation; the process conditions of thermal oxidation are: temperature 1100℃, time 7 hours , Hydroxide synthesis and oxidation.
[0023...
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The invention relates to an abrupt-junction voltage stabilizing diode made of polysilicon. A PN junction protecting ring is manufactured on an N type substrate polishing piece, and two layers of polysilicon are respectively deposited on the surface of the N type substrate polishing piece in the PN junction protecting ring and the inner half side of the PN junction protecting ring to form a voltage stabilizing diode of a parallel connection structure of a common PN junction diode and an abrupt-junction diode. The manufacture process comprises the following steps of: (1) manufacturing an oxidation layer on the surface of the N type substrate polishing piece; (2) photoetching the PN junction protecting ring; (3) enabling the PN junction protecting ring to brcome a P type doping area of a square resistor 2.5+ / -0.5 ohm per square by using a boron paper dispersing method; (4) depositing polysilicon layers; and (5) finally, removing redundant polysilicon on the surface. The voltage stabilizing diode of the invention achieves the effects of smaller reverse breakdown leakage current, smaller breakdown impedance, namely smaller voltage fluctuation in a larger reverse current change range and better voltage stabilizing effect and can meet the requirement of a high-standard user.
Description
Technical field [0001] The invention relates to a voltage stabilizing diode, in particular to a voltage stabilizing diode with an abrupt junction made of polysilicon and its manufacturing process. Background technique [0002] Zener diode is also called Zener diode. This diode is a semiconductor device with high resistance until the critical reverse breakdown voltage. At this critical breakdown point, the reverse resistance is reduced to a very small value. In this low-resistance region, the current increases while the voltage remains constant. Zener diodes are divided according to the breakdown voltage. Because of this characteristic, Zener tubes are mainly used as regulators or voltage reference components. [0003] The main purpose of the voltage regulator is to stabilize the voltage. In the case that the accuracy is not high and the current change range is not large, the voltage regulator tube that is closest to the required voltage regulation value can be directly connected i...
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IPC IPC(8): H01L21/77H01L21/329
Inventor 李昊王林蒲耀川程秀芹王轶军张晓情张志向
Owner TIANSHUI TIANGUANG SEMICON