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Particle beam assisted modifcation of thin film materials

A particle and grain boundary technology, applied in the system field of forming substrate crystal phase, which can solve the problems of process consistency, high cost, expensive and other problems

Inactive Publication Date: 2010-12-08
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the ELA process and the SLS process can produce panels with monocrystalline or polycrystalline silicon films, the above processes are not without disadvantages
For example, excimer lasers used in the above two processes are expensive to operate, resulting in expensive TFTs
In addition, the duty cycle may not be optimal for the conversion of amorphous silicon to crystalline silicon
In addition, the excimer laser may have pulse-to-pulse variation and spatial non-uniformity in the transmitted energy, which may affect the process consistency

Method used

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  • Particle beam assisted modifcation of thin film materials
  • Particle beam assisted modifcation of thin film materials
  • Particle beam assisted modifcation of thin film materials

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Embodiment Construction

[0021] To overcome the above-mentioned and other disadvantages present in laser-based thin film material processing, some embodiments of particle-based processing are disclosed. Particle-based processing can be advantageous when it can cause a non-equilibrium process. Furthermore, the particle parameters can be controlled more accurately than the parameters of the laser. Particle parameters may include spatial parameters (eg beam size and current density), particle flux (and / or beam current), particle species and particle dose, among others.

[0022] In the present invention, a beamline ion implantation system and a plasma based substrate processing system (such as a plasma assisted doping (PLAD) system or a plasma immersion ion system are disclosed Some embodiments of the plasma immersion ion implantation (PIII) system). However, one of ordinary skill in the art will appreciate that the present invention is also applicable to other systems, including other types of particle...

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Abstract

Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

Description

[0001] related applications [0002] This application is related to common application Serial No. 12 / 269327, filed November 12, 2008, and entitled "Particle Beam Assisted Modification of Thin Film Materials," and related to Nov. 12, 2008 Co-application with application serial number 12 / 269276 and titled "Particle Beam Assisted Modification of Thin FilmMaterials". The entire contents of each common application are hereby incorporated by reference. technical field [0003] The present invention relates to a system and technology for processing substrates, and in particular to a system and technology for forming substrate crystalline phases. Background technique [0004] Emerging technologies that are commonly used today, such as flat panel displays (FPDs) and solar cells, depend on the ability to fabricate electronic components on low-cost substrates. In the manufacture of FPD, the pixel of a typical low-cost FPD is switched by a thin film transistor (TFT), which is generall...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/26H01L29/786H01L31/042
CPCH01L21/268H01L31/182H01L21/02532H01L31/202H01L21/02422C30B29/06H01L21/02689Y02E10/546H01L31/0747H01L21/0237C30B1/023Y02P70/50
Inventor 乔纳森·吉罗德·英格兰法兰克·辛克莱约翰(本雄)·具拉杰许·都蕾卢多维克·葛特
Owner VARIAN SEMICON EQUIP ASSOC INC