Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing high-purity high-density alumina block material for sapphire single crystals

A production method and alumina technology, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low efficiency and low purity, and achieve the effects of low production cost, increased bulk density, and high yield.

Active Publication Date: 2011-12-21
李振亚 +1
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the problems of low purity and low efficiency in the above-mentioned existing alumina single crystal material preparation technology, the purpose of the present invention is to provide a high-efficiency, low-cost high-purity and high-density alumina bulk raw material for sapphire single crystal. production method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Firstly, a 80 mm thick alumina crushed crystal block with a purity of 4N is placed in a cold crucible made of a copper tube, and then a layer of alumina fine powder with a thickness of 90 mm and a purity of 4N is covered on the crushed crystal block.

[0031] Next, place 4 graphite electrode strips that are pre-designed and fixed in a parallel arrangement state on the alumina micropowder layer in a horizontal state. Then cover the graphite electrode strip with alumina micropowder with a thickness of 20 mm and a purity of 4N. After the alumina micropowder covers the graphite electrode strip, the whole graphite electrode strip is buried in the alumina micropowder covering it.

[0032] Immediately, turn on the circulating cooling water of the cold crucible to keep the cooling water in a state of circulating flow.

[0033] Then, connect the induction coil surrounding the cold crucible with the high-frequency induction power supply, set the frequency value of the high-frequ...

Embodiment 2

[0040] Firstly, a water-cooled crucible made of a copper tube was loaded with crushed alumina crystals with a thickness of 100 mm and a purity of 4N, and then a layer of alumina micropowder with a thickness of 80 mm and a purity of 4N was spread on the crushed crystals.

[0041]Next, 18 graphite electrode strips, which are pre-designed and fixed in a parallel arrangement state, are placed on the alumina micropowder layer in a horizontal state. Then cover the graphite electrode strip with alumina fine powder with a thickness of 30 mm and a purity of 4N. After the alumina micropowder covers the graphite electrode strip, the whole graphite electrode strip is buried in the alumina micropowder covering it.

[0042] Immediately, turn on the circulating cooling water of the cold crucible to keep the cooling water in a state of circulating flow.

[0043] Then, turn on the high-frequency induction power supply surrounding the induction coil of the cold crucible, set the frequency valu...

Embodiment 3

[0050] On the basis of the first embodiment, the step of starting the lowering device of the cold crucible is replaced by the operation mode of starting the raising device of the induction coil. The obtained high-purity and high-density alumina bulk raw material has a columnar small single-crystal cluster structure, and its bulk density is 3.7 / cm 3 , bulk density is 2.1 / cm 3 , purity >99.997%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for producing a high-purity high-density alumina block material for sapphire single crystals. A high-frequency induction power supply is utilized as a heating power supply, an alumina micropowder raw material in a cold crucible is melted to form a molten bath, and a Bruceton-process single crystal growing process making the cold crucible slowly reduced is combined, so that alumina in the molten bath generates multi-nucleus directional crystallization, and fine columnar or needle-like alumina smallcrystal clusters are obtained finally. The method is used for producing the high-purity high-density alumina block raw material, has low unit electricity consumption and is easy for mass production; and the obtained alumina smallcrystals have the purity of over 99.997 percent, the volume density of not less than 3.7g / cm<3> and the bulk density of not less than 2.0g / cm<3>.

Description

technical field [0001] The invention relates to a production method of a high-purity and high-density alumina block raw material for sapphire single crystal, especially a production method of a high-purity and high-density alumina block used as a raw material for large-scale sapphire single crystal growth. Background technique [0002] Sapphire crystal has excellent optical properties, mechanical properties and chemical stability, high strength, high hardness, erosion resistance, and can work under harsh conditions close to 2000 °C, so it is widely used in infrared military devices, satellite space technology, Window material for high-intensity lasers. Its unique lattice structure, excellent mechanical properties, and good thermal properties make sapphire crystals the most ideal components for practical applications such as GaN / Al2O3 light-emitting diodes (LEDs), large-scale integrated circuits, and superconducting nanostructured films. Substrate material. [0003] The raw...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01F7/46C30B29/20
Inventor 李振亚
Owner 李振亚
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com