Chemically mechanical polishing solution

A chemical machinery, polishing liquid technology, applied in polishing compositions, chemical instruments and methods, etc., can solve problems such as environmental pollution, affecting polishing rate, etc., and achieve high practical value.

Inactive Publication Date: 2010-12-29
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to overcome the existing chemical mechanical polishing fluid for polishing oxide dielectrics using polyether to suppress t

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1 Effect of the polishing solution of polyalkylene oxide modified with siloxane and unmodified polyalkylene oxide on the removal rate of TEOS and Poly

[0024] Silicon dioxide (TEOS) and polysilicon (Poly) were polished with polishing liquids 1-9 and comparative polishing liquids 1-5, and the removal rates of silicon dioxide and polysilicon were measured, as shown in Tables 1 and 2. It can be seen from Table 1 that compared with the polishing fluid containing ordinary polyether, the polyether modified with siloxane obviously does not produce bubbles. Compared with comparisons 4 and 5, although comparisons 4 and 5 do not generate foam, their removal rates for polysilicon are quite high, which will severely scratch the polished surface. It can be seen from Table 2 that as the content of the modified polyalkylene oxide increases, the effect on foam suppression is better. The amount of polyalkylene oxide terminated by siloxane is preferably 0.0025-0.1% by mass, mor...

Embodiment 2

[0030] Example 2 The effect of the number of repeating units in polyalkylene oxide on the removal rate of TEOS and Poly

[0031] Polish TEOS and Poly with polishing liquid 1, 10-12, and measure the removal rate of TEOS and Poly, as shown in Table 3. It can be seen from Table 3 that the number of repeating units in the polysiloxane group has no significant effect on the removal rate of TEOS, but the more the number of repeating units, the greater the inhibition on the removal rate of Poly. In order to achieve a higher polysilicon removal rate, the number of repeating units greater than 9 must be selected.

[0032] The polishing liquid formula is shown in Table 3. Use KOH to adjust the pH, and deionized water to make up the balance. The polishing conditions are: downforce 5.0psi, polishing pad IC 1000, polishing disc rotation speed 70rpm, polishing liquid flow rate 100ml / min, polishing machine Logitec PM5.

[0033] table 3

[0034]

Embodiment 3

[0035] Example 3 The effect of different siloxane group-terminated polyalkylene oxides on the removal rate of TEOS and Poly

[0036] TEOS and Poly were polished with polishing solutions 1, 13-14 and comparison 6, and the removal rates of TEOS and Poly were measured, as shown in Table 4. It can be seen from Table 4 that the inhibitory effect on the removal rate of Poly with substituents on siloxane is obviously better than that without substituents. To achieve a higher polysilicon rate, dimethylsiloxane and trimethylsiloxane are better. If a higher polysilicon removal rate is required, trimethylsiloxane should be selected.

[0037] The polishing liquid formula is shown in Table 4, the pH is adjusted with KOH, and the balance is made up with deionized water. The polishing conditions are: downforce 5.0psi, polishing pad IC1000, polishing disc rotation speed 70rpm, polishing liquid flow rate 100ml / min, polishing machine Logitec PM5.

[0038] Table 4

[0039]

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PUM

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Abstract

The invention discloses a chemically mechanical polishing solution, which is characterized by comprising silica, alkylation siloxane end-capped poly-alkoxy and water. The polishing solution of the invention overcomes the defects that the existing chemically mechanical polishing solution used for polishing oxide dielectrics adopts polyether to restrain the polishing rate of polycrystalline silicon, a large amount of foam is generated in the polishing process, and the polishing rate is influenced and the environment is polluted. In the invention, modified polyether is used, a large amount of foam can not be generated even under severely stirring, the removal rate of the polycrystalline silicon is controlled, and the polishing rate of the oxide is not influenced, thus being benefit for transporting.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] In the manufacturing process of integrated circuits, thousands of structural units are often built on the silicon wafer substrate, and these structural units are further formed into functional circuits and components through multi-layer metal interconnections. In a multilayer metal interconnection structure, silicon dioxide or silicon dioxide doped with other elements is filled between metal wires as an interlayer dielectric (ILD). With the development of integrated circuit metal interconnection technology and the increase of wiring layers, chemical mechanical polishing (CMP) has been widely used in surface planarization in chip manufacturing process. These planarized chip surfaces facilitate the production of multilayer integrated circuits and prevent distortions caused by applying dielectric layers on uneven surfaces. [0003] The CMP process uses an abra...

Claims

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Application Information

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IPC IPC(8): C09G1/18
Inventor 宋伟红姚颖
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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