High-sensitivity photosensitive gas sensor and preparation method thereof

A gas sensor, high-sensitivity technology, used in instruments, scientific instruments, material analysis by optical means, etc., can solve problems such as low sensitivity, and achieve the effects of improving sensitivity, good response, and improving light efficiency and gas sensing efficiency.

Inactive Publication Date: 2010-12-29
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of low sensitivity of metal oxide semiconductor gas sensors at low temperature, the invention provides a light-sensitized gas sensor with photocatalyst-gas-sensing function composite oxide semiconductor as the sensitive body and its preparation method

Method used

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  • High-sensitivity photosensitive gas sensor and preparation method thereof
  • High-sensitivity photosensitive gas sensor and preparation method thereof
  • High-sensitivity photosensitive gas sensor and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0040] With the ZnO prepared by the method in Comparative Example 2, the SnO prepared by the method in Comparative Example 1 2 According to the mass ratio of 1:9, the composite material was firstly dry-milled for 2 hours, and then deionized water was added to wet-mill for 30 minutes to form a paste, which was set aside.

[0041] Select Al with a tube length of 4mm, a wall thickness of 0.2mm, an outer diameter of 1.2mm, and an inner diameter of 0.8mm 2 o 3 The ceramic tube is the substrate 1, and the gold ring and platinum wire are the electrodes 2 (purchased from Siping Semiconductor Factory). Spin-coating ZnO and SnO 2 The paste with a mass ratio of 1:9 was uniformly coated on the Al 2 o 3 After being air-dried, put it into a muffle furnace for sintering at 600°C for 2 hours, and then cool it down to room temperature naturally. Pass a 30Ω Ni-Cr heating coil 3 through the cooled ceramic tube with a sensitive body 4 as a heater to obtain a gas sensor. The ultraviolet ligh...

Embodiment 2

[0043] The device structure and preparation method are the same as in Example 1, except that ZnO and SnO 2 The mass ratio is 3:7.

Embodiment 3

[0045] The device structure and preparation method are the same as in Example 1, except that ZnO and SnO 2 The mass ratio is 5:5.

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Abstract

The invention relates to a high-sensitivity photosensitive gas sensor and a preparation method thereof. In a photosensitive gas sensor made of a gas sensitive material, a photocatalyst is introduced to improve the gas sensitivity of a sensitive body, namely a photocatalyst-gas sensitive function composite oxide semiconductor is taken as the sensitive body, on the one hand, the gas sensitive material has good response to gas to be tested, and on the other hand, the photocatalyst absorbs ultraviolet light to the largest extent; and the combined action results in improvement of illumination efficiency and gas sensitive efficiency of the sensitive body, and the sensitivity of the gas sensor is improved finally. Compared with sensors made of a pure gas sensitive material, a sensor made of a sensitive body in which the mass ratio of zinc dioxide to stannic oxide is 3:7 has the sensitivity to 100ppm ethanol gas at 250DEG C improved from 4.3 to 10, and a sensor made of a sensitive body in which the mass ratio of titanium dioxide to stannic oxide is 3:7 has the sensitivity to 100ppm ethanol gas at room temperature improved from 9 to 16.

Description

technical field [0001] The invention belongs to the technical field of metal oxide semiconductor gas sensors, and in particular relates to a high-sensitivity light-sensitized gas sensor and a preparation method thereof. Background technique [0002] Realizing the near-room temperature operation of metal oxide semiconductor gas sensors has always been an important direction in the field of gas sensors. The current study shows that ultraviolet light excitation is the most likely to achieve room-temperature operation of metal-oxide-semiconductor gas sensors. [0003] The metal oxide semiconductor gas sensor is a polycrystalline sintered body composed of a large number of crystal grains. When the sensor is working, electrons must pass through the grain boundary barrier and the surface depletion layer when they go from one crystal grain to another. Photoexcitation can increase the number of carriers in the semiconductor, reduce the grain boundary barrier, and increase the mobili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/63G01N21/01
Inventor 刘凤敏孙鉴波许靖卢革宇
Owner JILIN UNIV
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