Composite feedback light intensity modulation system of optical address potentiometric transducer

Abstract

The invention discloses a composite feedback light intensity modulation system of an optical address potentiometric transducer. A super-radiation light-emitting dioxide module of the modulation system comprises a super-radiation light-emitting dioxide, a refrigerator and a thermal resistor; a composite feedback light intensity modulation circuit comprises an amplifying and feedback circuit, a last level current amplifier and a tube core temperature detection and control circuit; an output end of the amplifying and feedback circuit is connected with an input end of the last level current amplifier; an output end of the last level current amplifier is connected with the supper-radiation light-emitting dioxide; the super-radiation light-emitting dioxide is connected with a first negative feedback interface of the amplifying and feedback circuit; the thermal resistor is connected with an input end of the tube core temperature detection and control circuit; an output end of the tube core temperature detection and control circuit is connected with the refrigerator; and the super-radiation light-emitting dioxide, the refrigerator and the thermal resistor are in thermal coupling with one another. The light intensity of the composite feedback light intensity modulation system changes along with voltage signals input from the outside proportionally, and has the advantages of low distortion characteristic, long-term stability and temperature stability.

Description

technical field

[0001] The invention relates to an optical addressing potential sensor and a composite feedback light intensity modulation system thereof, belonging to the fields of chemical sensors and biosensors. Background technique

[0002] In chemical sensing and biological sensing, light addressable potentiometric sensors (LAPS) are often used; the light addressable potentiometric sensor is a semiconductor passive sensor with a function similar to an ion-sensitive field effect transistor and a relatively simple structure. Sensitive devices were first proposed by Hafeman et al. in the United States in 1988. Due to its mechanism, the optical addressable potential sensor needs alternating light intensity to irradiate the surface of the sensor to generate alternating current; the optical excitation can be easily realized on the silicon substrate and the silicon surface can be scanned and addressed, so as to realize the array of sensors miniaturization, intelligence and ot...

Images