Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for growing yttrium ferrite crystal by guided mold pulling method

The technology of pulling method and yttrium ferrite is applied in the field of growing yttrium ferrite crystal by guided mode pulling method. The effect of uniform distribution of processes and components

Inactive Publication Date: 2011-01-12
FUZHOU UNIV
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for growing yttrium ferrite crystals by edge-defined film-fed growth method, which solves the problems of abnormal melt convection and easy crystal drift during the growth process of the pulling method. , to obtain large size yttrium ferrite single crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for growing yttrium ferrite crystal by guided mold pulling method
  • Method for growing yttrium ferrite crystal by guided mold pulling method
  • Method for growing yttrium ferrite crystal by guided mold pulling method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 4

[0044] (1) Synthesis of polycrystalline raw materials: Accurately weigh Fe with a purity of 99.99% according to the ratio of Y / (Y+Fe) to 40.0% 2 o 3 and Y 2 o 3 Drugs, put the weighed drugs into a corundum mortar and grind them evenly, then press them into tablets on a tablet press, and then perform high-temperature sintering at a temperature of 1200°C for 15 hours to prepare polycrystalline raw materials.

[0045] (2) Single crystal growth: Using the guided mold pulling method, the iridium crucible is used as the crystal growth container, the guided mold is installed in the center of the crucible, and a circular iridium sheet with holes is placed on the upper surface of the guided mold. Add the prepared polycrystalline raw material in the crucible again, heat the crucible under nitrogen atmosphere to melt the polycrystalline raw material into a molten body, and make the molten body 5 of the polycrystalline raw material not pass through the gap in the lower part of the guide...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
melting pointaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for growing an yttrium ferrite crystal by a guided mold pulling method, which comprises the following steps: placing a guided mold with internal longitudinal gaps in a crucible, adding polycrystal materials into the crucible, heating the crucible to melt the polycrystal materials, enabling the molten polycrystal materials to rise over the gaps at the bottom of the guided mold so as to enable the molten polycrystal materials to be raised to the top surface of the guided mold along the longitudinal gaps in the guided mold under the capillary effect, then dropping seed crystals, and finally pulling to obtain the yttrium ferrite single crystal. The invention can prepare large-size yttrium ferrite single crystals, simplify the post processing procedure of the crystal and lower the preparation cost of the crystal, and has the advantages of high crystal growing speed and good optical uniformity of the prepared crystal, thereby solving the problem that the pulling method can not be used for preparing large-size single crystals.

Description

technical field [0001] The invention relates to a method for growing crystals, in particular to a method for growing yttrium ferrite crystals by a guided mode pulling method. Background technique [0002] In recent years, studies by H.Hauser et al. have shown that: YFeO 3 Compared with YIG, it has a higher magneto-optical figure of merit in the visible and near-infrared regions, and a lower saturation magnetic field strength M S , higher Curie temperature T C , and the coercive force is controllable, the domain width is much wider than that of garnet, the domain wall motion range is large, and the domain wall motion speed is the fastest in magnetic media, so it can be applied to Faraday devices in the visible and near-infrared bands. The traditional pulling method growth research found that YFeO 3 The convection of the high-temperature melt is very strong, the unsteady-state oscillating melt is not easy to grow crystals, the surface tension of the melt is very high, and t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/24C30B29/24
Inventor 庄乃锋林树坤聂建彪陈建中陈文斌赵斌胡晓琳
Owner FUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com