Preparation method for alpha-aluminium oxide monocrystal

An aluminum oxide, single crystal technology, applied in chemical instruments and methods, single crystal growth, crystal growth and other directions, can solve the problems of affecting quality, no success, air leakage of powder, etc., to save production costs and improve the pass rate , the effect of reducing scrap rate

Inactive Publication Date: 2011-01-12
四川鑫通新材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] 1. γ-Al 2 o 3 The shape of the powder is flake or hemispherical, and the dispersibility is not good, which will cause agglomeration, resulting in poor sliding performance, and prone to air leakage of empty powder;
[0015] 2. γ-Al 2 o 3 The average particle size of the powder particles is 4.4 μm, and the specific gravity of the particles is relatively light. Therefore, when growing crystals, it is necessary to use oxygen to carry the powder material, which leads to large temperature field changes during growth due to dispersion, which is not conducive to operation control, and is prone to deformation or over-melting. Non-conforming products such as internal non-melting layer and bubbles, α-Al 2 o 3 The internal quality of single crystals is no

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] Preparation: Select a growth support of the sintering machine; prepare δ-Al for the test 2 o 3 Powder, the average particle size is 2.1 μm. Make the 180 mesh screen for the charging hopper.

[0080] Cleaning: Blow the inside of the hopper with a blower.

[0081] Charge: put δ-Al 2 o 3 Pour the powder into the 180-mesh sieve loading hopper, and cover it to isolate the dust.

[0082] Seed insertion: Insert the seed crystal with the crystal orientation of 75° on the A axis vertically into the top of the growth support; Light refraction has an effect.

[0083]Burning crystals: 1), ignition and gas adjustment: ignite the hydrogen-oxygen flame, adjust the ratio of hydrogen-oxygen gas to 3.0:1, and the flame temperature is 2050°C.

[0084] 2) Chemical crystallization: Start the electromagnet to strike the hammer, strike the material guide rod of the hopper to discharge the material, and crystallize on the top of the seed crystal; slow down the discharge and strike the f...

Embodiment 2

[0095] Preparation: Select a growth support of the sintering machine; prepare δ-Al for the test 2 o 3 Powder, the average particle size is 2.1 μm. Make the 180 mesh screen for the charging hopper.

[0096] Cleaning: Blow the inside of the hopper with a blower.

[0097] Charge: put δ-Al 2 o 3 Pour the powder into the 180-mesh sieve loading hopper, and cover it to isolate the dust.

[0098] Seed insertion: Insert the seed crystal with the crystal orientation of 75° on the A axis vertically into the top of the growth support; Light refraction has an effect.

[0099] Burning crystals: 1), ignition and gas adjustment: ignite the hydrogen-oxygen flame, adjust the ratio of hydrogen-oxygen gas to 3.2:1, and the flame temperature is 2080°C.

[0100] 2) Chemical material crystallization: Start the electromagnet to strike the hammer, strike the material guide rod of the hopper to discharge the material, and crystallize at the top of the seed crystal; slow down the falling material...

Embodiment 3

[0111] Preparation: Select a growth support of the sintering machine; prepare δ-Al for the test 2 o 3 Powder, the average particle size is 2.1 μm. Make the 180 mesh screen for the charging hopper.

[0112] Cleaning: Blow the inside of the hopper with a blower.

[0113] Charge: put δ-Al 2 o 3 Pour the powder into the 180-mesh sieve loading hopper, and cover it to isolate the dust.

[0114] Seed insertion: Insert the seed crystal with the crystal orientation of 75° on the A axis vertically into the top of the growth support; Light refraction has an effect.

[0115] Burning crystals: 1), ignition and gas adjustment: ignite the hydrogen-oxygen flame, adjust the ratio of hydrogen-oxygen gas to 3.3:1, and the flame temperature is 2080°C.

[0116] 2) Chemical material crystallization: start the electromagnet to strike the hammer, strike the material guide rod of the hopper to discharge the material, and crystallize at the top of the seed crystal; slow down the falling material...

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Abstract

The invention belongs to the techncial field of preparation methods for synthetic sapphire crystals, and especially realtes to a preparation method for an alpha-aluminium oxide monocrystal, aiming to solve the technical problems on providing the preparation method for the alpha-aluminium oxide monocrystal with the characteristics of environment protection and stable product quality. The preparation method of the alpha-Al2O3 monocrystal comprises the steps of adding raw materials; inserting a seed crystal; sintering the crystal; crystallizing the chemical materials; expanding the center and the crystal; and carrying out isodiametric growth and the like, wherein the raw materials are delta-Al2O3 and the crystal for inserting is a seed crystal with the crystal orientation of 75-degree axis A. The invention can ensure that the qualification rate of the alpha-Al2O3 monocrystal is enhanced; the rejection rate is reduced; and the production cost is saved.

Description

technical field [0001] The invention belongs to the technical field of preparation methods of artificial sapphire crystals, in particular to α-Al 2 o 3 Method for the preparation of single crystals. Background technique [0002] With α-Al 2 o 3 The application of single crystal is more and more extensive, and the production scale is also increasing. Currently producing α-Al 2 o 3 The single crystal method is mainly to use ammonium aluminum sulfate to desulfurize and deammonize to obtain γ-Al 2 o 3 Powder, γ-Al 2 o 3 The powder is further prepared to obtain α-Al 2 o 3 single crystal. by γ-Al 2 o 3 Powder preparation of α-Al 2 o 3 The process flow of single crystal is: add raw material→ignite hydrogen-oxygen flame→chemical material crystallization→crystal expansion→normal equal-diameter growth→turn off hydrogen-oxygen flame and stop furnace→take out single crystal, which specifically includes the following steps: [0003] 1. Raw material addition: due to γ-Al ...

Claims

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Application Information

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IPC IPC(8): C30B29/20
Inventor 钱幼平代成唐大林代成功王俊
Owner 四川鑫通新材料有限责任公司
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