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Method for forming blade material particles special for wire-electrode cutting of semiconductor material and ultra-hard material

A superhard material and particle forming technology, applied in the direction of grain processing, etc., can solve the problem of low (wet ball mill only about 30kg/h, jet mill can only reach about 200kg/h, waste water, waste gas and solid Problems such as waste polluting the environment and low output rate can achieve the effect of maintaining good product crystallization, good anti-breaking performance, and increasing the yield of slicing.

Inactive Publication Date: 2011-01-19
河南晟道科技有限公司
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  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

Because the output rate of the product prepared by the above method is low (the single number output rate of wet ball milling is only 9%, and the output rate of dry ball mill classifier improved by Raymond Mill can only reach 52%), the production efficiency is low ( A single wet ball mill is only about 30kg / h, and the jet mill can only reach about 200kg / h), high energy consumption, and the power consumption per ton is above 1000 degrees, and the noise generated during the production process is generally above 80dB
As the raw material of the cutting edge, since ordinary silicon carbide and diamond are used, in order to meet the multi-wire cutting of second-generation semiconductor materials such as solar-grade silicon wafers, integrated circuit chips, and gallium arsenide, and the requirements of the sapphire LED lining industry According to product requirements, when using the above method to prepare cutting blade particles, sulfuric acid, hydrofluoric acid, hydrochloric acid, etc. must be used for chemical treatment, which in turn causes a large amount of waste water, waste gas and solid waste to pollute the environment

Method used

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  • Method for forming blade material particles special for wire-electrode cutting of semiconductor material and ultra-hard material
  • Method for forming blade material particles special for wire-electrode cutting of semiconductor material and ultra-hard material
  • Method for forming blade material particles special for wire-electrode cutting of semiconductor material and ultra-hard material

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Embodiment Construction

[0025] As shown in the figure, the method for forming special blade particles for wire cutting of semiconductor materials and superhard materials according to the present invention comprises the following steps:

[0026] Step 1: Select silicon carbide (microhardness HV≥3000, structural purity 95%, toughness ≥70%) with Mohs hardness ≥ 9.3 and crystal form of 6H-SiC or Mohs hardness ≥ 9.9-10, Composite synthetic diamond (toughness ≥ 90%) superhard material of crystal type 6H-SiC is used as raw material;

[0027] Step 2: Send the raw materials into the air-swept grinder through the screw feeder for grinding. During the grinding, the computer will automatically measure and feed the materials, and the feeding speed will be controlled from 700 to 3500kg / h. The grinding medium gradation is Φ50: Φ40: Φ30 =0.4~0.6:1:0.5~0.7, quantity 11000~40000Kg: Monitor the change of grinding current through the man-machine interface, when the current is less than 10~15% of the rated current of the ...

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Abstract

The invention discloses a method for forming blade material particles special for wire-electrode cutting of a semiconductor material and an ultra-hard material, which comprises the steps of: 1, selecting a 6H-SiC silicon carbide or silicon carbide compound diamond ultra-hard material as a raw material; 2, feeding the raw material into a grinding machine to be ground; 3, carrying out primary grading on ground powder by an air inducing device, selecting fine particles with 16 micrometers for carrying out secondary grading, returning rough particles with 16 micrometers to the grinding machine to be continuously ground; 4, feeding finished particles of 16-5 micrometers through secondary grading to a packaging bin for packaging; and 5, feeding the fine particles with micrometer grade as a secondary product to a cyclone device for collecting. The particle forming method can meet the requirement for particle forming of free multiple wire-electrode cutting of the semiconductor material at present on a particle blade product, also satisfies the requirement for the preparation formation of blade particles special for a solidification jigsaw, lays the technical foundation for the free multiple wire-electrode cutting of the semiconductor material, and becomes the low-consumption and pollution-free processing manner.

Description

technical field [0001] The invention relates to a wire cutting blade material, in particular to a method for forming special blade material particles for wire cutting of semiconductor materials and superhard materials. Background technique [0002] Most of the first-generation and second-generation semiconductor materials use silicon carbide micropowder and polyethylene glycol as the cutting slurry for multi-wire cutting. A large amount of slurry waste is generated during the production process, which belongs to high resource consumption and high cost. Pollution and environmentally unfriendly production methods; or the production method of diamond wire saw adopted by very few enterprises in the industry. Due to the influence of diamond powder production capacity and price, the processing cost is more than 10 times that of the previous production method. As the preparation of special cutting edge particles for semiconductor materials, jet milling and classification (including...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B02C15/00B02C25/00
Inventor 杨东平
Owner 河南晟道科技有限公司
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