Photodiode n region structure optimized mercury-cadmium-tellurium (HgCdTe) long-wavelength detection chip
A photodiode and chip technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as photodiode dynamic impedance and detection performance degradation, and achieve suppression of defect-assisted tunneling current, reduction of density, and optimization of energy band structure Effect
Inactive Publication Date: 2011-01-26
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Therefore, the ion implantation damage in these electrical n-regions and the problem that the p-n junction electric field is located in the physical damage region lead to a decline in the dynamic impedance and detection performance of the photodiode of the ion-implanted long-wave photovoltaic detection chip.
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[0013] The ion implantation n optimized with the photodiode n region structure + -on-p Hg 1-x Cd x Te (x=0.221) infrared long-wave photovoltaic detection chip is an embodiment, and in conjunction with the accompanying drawings the specific implementation of the present invention is described in further detail:
[0014] See figure 1 , the optimized n-region structure of the photodiode of the present invention is n + -on-p-type HgCdTe infrared long-wave photovoltaic detection chip includes: infrared substrate 1, p-type active region 2 of photosensitive element, n-type region 3 of photosensitive element, common electrode 4 on the surface of p-type region, n-type region The photosensitive element electrode 5 on the surface, the passivation dielectric film 6 of the detection chip and the indium column array 7 mixed and interconnected with the readout circuit. The array of n-type regions 3 of the photosensitive element and the p-type active region 2 of the photosensitive element...
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The invention discloses a photodiode n region structure optimized ion implantation n+-on-p type mercury-cadmium-tellurium (HgCdTe) infrared long-wavelength photovoltaic detection chip, and relates to photoelectric detection devices. The invention adopts a structural scheme that a photodiode n region consists of an ion implantation damage repair region formed by ion implantation and low-energy plasma optimization, and a promotion region of a photodiode p-n junction to achieve the n+-on-p type HgCdTe infrared long-wavelength photovoltaic detection chip so as to effectively solve the problem of reduction of dynamic impedance and detection performance of a photosensitive element diode caused by ion implantation damage and a p-n junction electric field positioned in a physical damage region existing in the electrical n region of the traditional HgCdTe infrared focal plane array long-wavelength photovoltaic detection chip. The photodiode n region structure optimized ion implantation n+-on-p type HgCdTe infrared long-wavelength photovoltaic detection chip has the characteristic of high structural integration level.
Description
technical field [0001] The invention relates to photodetection device technology, in particular to an ion implantation n + -on-p type mercury cadmium telluride (HgCdTe) infrared long-wavelength (long-wavelength) photovoltaic detection chip. Background technique [0002] Infrared focal plane array device is an advanced imaging sensor with both infrared information acquisition and information processing functions. There are important and extensive applications in military and civilian fields. Due to its irreplaceable status and role, major industrial countries in the world have listed HgCdTe infrared focal plane array device manufacturing technology as a high-tech project for key development. [0003] Driven by advanced infrared application systems, infrared detection technology has entered an important development stage of the third generation of infrared focal plane detectors characterized by large area array, miniaturization and polychromaticity (see A.Rogalski, J. . Ant...
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IPC IPC(8): H01L27/144H01L31/101H01L31/0352
Inventor 叶振华王建新潘建珍邢雯刘丹陈昱林春胡晓宁丁瑞军何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI