Sheet structure, semiconductor device and method of growing carbon structure

A growth method and structure technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of reliability deterioration, improve thermal conductivity and electrical conductivity, prevent manufacturing costs, Effect of preventing increase of manufacturing cost

Active Publication Date: 2011-01-26
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the miniaturization of components, it is clear that copper wiring mainly used in integrated circuit devices currently has many problems such as deterioration of reliability due to electromigration (electromigration)

Method used

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  • Sheet structure, semiconductor device and method of growing carbon structure
  • Sheet structure, semiconductor device and method of growing carbon structure
  • Sheet structure, semiconductor device and method of growing carbon structure

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0079] use Figure 1 to Figure 5 The carbon nanotube sheet and its manufacturing method according to the first embodiment of the present invention will be described.

[0080] figure 1 It is a plan view and a schematic cross-sectional view showing the structure of a carbon nanotube sheet according to the present embodiment, figure 2 is a plan view showing the shape of the carbon nanotube bundles of the carbon nanotube sheet according to the present embodiment, image 3 is a schematic cross-sectional view showing the structure of a carbon nanotube sheet according to this embodiment, Figure 4 and Figure 5 It is a cross-sectional view showing the steps of the method for producing the carbon nanotube sheet according to the present embodiment.

[0081] First, use figure 1 The structure of the carbon nanotube sheet according to this embodiment will be described. figure 1 (a) and figure 1 (b) is a plan view and a cross-sectional view showing the structure of the carbon nanot...

no. 2 approach

[0143] use Figure 6 to Figure 9 The carbon nanotube sheet and its manufacturing method according to the second embodiment of the present invention will be described. right with Figure 1 to Figure 5 In the carbon nanotube sheet and its production method according to the first embodiment shown, the same components are given the same reference numerals, so descriptions or brief descriptions are omitted.

[0144] Figure 6 It is a plan view and a schematic cross-sectional view showing the structure of a carbon nanotube sheet according to the present embodiment, Figure 7 is a schematic cross-sectional view showing the structure of a carbon nanotube sheet according to a modified example of the present embodiment, Figure 8 and Figure 9 It is a cross-sectional view showing the steps of the method for producing the carbon nanotube sheet according to the present embodiment.

[0145] First, use Figure 6 The structure of the carbon nanotube sheet according to this embodiment w...

no. 3 approach

[0192] use Figure 10 to Figure 13 A semiconductor device and a manufacturing method thereof according to a third embodiment of the present invention will be described.

[0193] Figure 10 is a schematic cross-sectional view showing the structure of the semiconductor device according to the present embodiment, Figure 11 to Figure 13 It is a cross-sectional view showing the steps of the manufacturing method of the semiconductor device according to the present embodiment.

[0194] First, use Figure 10 The structure of the semiconductor device according to this embodiment will be described.

[0195] A wiring layer 42 is formed on the substrate 40 . On a region of the substrate 40 other than the region where the wiring layer 42 is formed, an interlayer insulating film 44 is formed. On one end of the wiring layer 42 , a via wiring 64 made of carbon nanotube bundles is formed via the TiN film 52 . A wiring layer 66 made of graphite and connected to the via wiring 64 is forme...

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Abstract

The sheet structure contains a linear structure composed of multiple carbon elements disposed with a first space from each other and has multiple linear structure bundles (12) disposed with a second space larger than the first space from each other, a graphite layer (14) provided in interspaces of the multiple linear structure bundles (12) and connected to the multiple linear structure bundles and a filling layer (16) placed in the first space and second space so as to hold the multiple linear structure bundles (12) and graphite layer (14).

Description

technical field [0001] The present invention relates to a sheet-like structure having a linear structure made of carbon elements, a semiconductor device, and a method for growing the carbon structure. Background technique [0002] Electronic components used in central processing units (CPU: Central Processing Unit) of servers or personal computers have the following structure to efficiently dissipate the heat emitted by semiconductor elements, that is, through indium disposed directly above the semiconductor elements A thermally conductive sheet such as an indium sheet is provided with a heat spreader made of a material having high thermal conductivity such as copper. [0003] However, since the demand for rare metals (rare metal) has increased sharply in recent years, the price of indium has risen sharply, and an alternative material cheaper than indium has been expected. In addition, in terms of physical properties, the thermal conductivity of indium (50W / m·K) cannot be s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B1/00C01B31/02H01L21/3205H01L23/52
CPCC01B2202/34B82Y30/00H01L21/32051H01L2221/1094H01L21/76879H01L2924/0002C01B2202/08H05K3/4038H01L23/3733H01L23/53276B82Y40/00H01L23/3735C01B31/0226H01L23/373H01L21/76885C01B32/16Y10T428/24802Y10T428/30H01L2924/00
Inventor 近藤大雄岩井大介山口佳孝曾我育生
Owner FUJITSU LTD
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