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Process control method and system of copper chemical mechanical polishing

A chemical machinery and process control technology, applied in surface polishing machine tools, workpiece feed motion control, grinding machine parts, etc. Improve Accuracy, Adjust Accurate Effects

Active Publication Date: 2011-03-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the unevenness of copper thickness will lead to poor uniformity of product performance

Method used

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  • Process control method and system of copper chemical mechanical polishing
  • Process control method and system of copper chemical mechanical polishing
  • Process control method and system of copper chemical mechanical polishing

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Experimental program
Comparison scheme
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Embodiment Construction

[0039] One of the objectives to be achieved by the solution of the present invention is to make the variation range of the copper layer thickness in the monitoring area as small as possible after the copper CMP process, that is to say to improve the uniformity of the copper layer thickness as much as possible. Aiming at the deficiency of the monitoring area in the prior art, the present invention proposes a new design scheme of the monitoring area.

[0040] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further elaborated below in conjunction with the accompanying drawings.

[0041] Figure 4 A schematic diagram showing a top view direction of a sample wafer according to an embodiment of the present invention. The figure only shows that the monitoring area 402 is set on the sample wafer 401 , and other irrelevant structures are not shown. Different from the entire copper layer used as the monito...

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Abstract

The invention discloses a process control method of copper chemical mechanical polishing (CMP). A detection region consisting of a plurality of parallel copper metal wires is arranged in a sample wafer; the thickness of the copper metal wire in a monitor region of sample wafer in the current batch of wafers is measured before and after the CMP; the average material removal rate of the sample wafer is calculated according to the difference value of the two thickness values; the material removal rate obtained by calculation is compared with a target material removal rate so as to determine a time compensation value; and the time length of the CMP is adjusted according to the time compensation value and the CMP processing is performed on the next batch of wafers by using the adjusted time length. The invention also discloses a process control system of the copper chemical mechanical polishing. Through the scheme of the invention, the accuracy of thickness measurement is greatly improved, so that the time length is more accurately adjusted.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a process control method and system for chemical mechanical polishing of copper. Background technique [0002] As the critical dimensions of semiconductor devices are further reduced, copper metallization is becoming more and more important as a processing method for interconnecting devices. Currently commonly used as figure 1 The illustrated process flow constructs a copper metal layer on a wafer and includes the following steps: [0003] Step 101: Deposit an interlayer dielectric (Inner Level Dielectric, ILD) on the surface of the wafer, where the interlayer dielectric is an insulator material. [0004] Step 102: performing photolithography on the interlayer dielectric to generate a pattern, and the pattern defines a groove structure. [0005] Step 103: sequentially deposit a barrier layer and a copper seed layer on the upper surface of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B29/02H01L21/02B24B49/04
CPCH01L2924/0002
Inventor 邓武锋
Owner SEMICON MFG INT (SHANGHAI) CORP
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