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Method for preparing chemically mechanical polishing (CMP) solution for KTiOPO4 crystal

A technology of potassium titanyl phosphate and polishing liquid, which is applied in the direction of polishing compositions containing abrasives, etc., which can solve the problems of organic matter, metal ions, large particle harmful pollution, reduced device yield, and increased cost, achieving high speed and high efficiency. Smooth and low-damage polishing, cost reduction, and less pollution

Inactive Publication Date: 2013-03-13
TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the polishing liquid used in domestic production is imported. One of the reasons is that the traditional domestic polishing liquid preparation technology brings negative effects such as pollution.
Such as traditional compounding and mechanical stirring and other preparation methods are likely to cause harmful pollution such as organic matter, metal ions, large particles, etc.
As a result, the cost in subsequent processing is increased and the device yield is reduced.

Method used

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  • Method for preparing chemically mechanical polishing (CMP) solution for KTiOPO4 crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1: preparation 4000gKTP crystal polishing liquid

[0029] Under negative pressure stirring, take 160g of amine base, weigh 40gKOH and dilute with 200g of ultra-pure deionized water above 18MΩ, 40g of FA / O active agent and 40g of FA / O chelating agent in order, and then under negative pressure. 15-25nm nano-SiO 2 800g of sol was inhaled, and finally 2720g of deionized water was inhaled while stirring. After stirring evenly under the vortex state, 4000g of KTP crystal polishing liquid is obtained, which can be filled after stirring evenly.

Embodiment 2

[0030] Embodiment 2: preparation 4000gKTP crystal polishing fluid

[0031] Under negative pressure stirring, take 80g of amine base, weigh 20g of KOH, dilute with 100g of ultra-pure deionized water above 18MΩ, inhale 10g of FA / O active agent and 10g of FA / O chelating agent in sequence, and then inhale the particle size under negative pressure. 15-25nm nano-SiO 2 3600g of sol was inhaled, and finally 180g of deionized water was inhaled while stirring. After stirring evenly under the vortex state, 4000g of KTP crystal polishing liquid is obtained, which can be filled after stirring evenly.

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Abstract

The invention relates to a technology for preparing a chemically mechanism polishing (CMP) solution in the high-precision surface processing of a KTiOPO4 (KTP for short) crystal. A nanometer SiO2 grinding material is selected, wherein the concentration of the grinding material is 30-50 percent by weight, and the grain size is 15-100nm. In the preparation process, a negative pressure stirring preparation method under a closed system is adopted, which avoids the pollution of organic matters, large particles, metal ions, and the like brought by traditional preparation methods of compounding, mechanical stirring, and the like and can achieve ultra-clean requirement. Since the stirring is carried out under a vortex state, the method can realize no agglomeration and no dissolution, especially at the bottom and the edge of a reactor, under the conditions of high concentration and high pH value of the nanometer SiO2 grinding material. The method has the advantages of low cost, low roughness degree, high speed, no environment pollution and no equipment corrosion.

Description

technical field [0001] The invention belongs to the polishing liquid preparation technology, in particular to the polishing liquid preparation technology of KTP crystal material. Background technique [0002] Potassium titanyl phosphate (KTiOPO 4 , referred to as KTP) crystal is a kind of nonlinear optical crystal with excellent comprehensive performance. It has a high nonlinear coefficient (about 15 times that of KDP); high thermal conductivity (2 times that of BNN crystal); high resistance to light damage threshold; extremely high frequency conversion efficiency and relatively low price ; Stable chemical properties such as no deliquescence and no decomposition below 900°C; good mechanical properties; the crystal surface is easy to polish, and the mismatch is small. It is suitable for making frequency doublers, and its frequency doubling efficiency for 1064nm can reach about 80%. The crystal can be used to make components such as frequency doubling, frequency mixing, elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 刘玉岭牛新环刘钠
Owner TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
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