Manufacturing method of oxide layer between splitting grids

Abstract

The invention relates to a manufacturing method of an oxide layer between splitting grids, which comprises the following step of: carrying out in-situ vapor generation by using a rapid thermal processing device so as to form the oxide layer on the surface of a common source region between the splitting grids. The manufacturing method can accurately control the thickness of the oxide layer formed on the highly doped common source region so as to avoid over thickness of the oxide layer. Moreover, the thickness of the formed oxide layer is uniform, and the smiling effect is improved.

Description

technical field [0001] The invention relates to the technical field of memory manufacturing, in particular to a manufacturing method of an oxide layer between split gates. Background technique [0002] Flash memory generally adopts a multilayer gate type memory cell structure. refer to figure 1 As shown, the memory cell transistor with a multilayer gate structure has a floating gate 14 in addition to a drain 11 , a source 12 and a gate 13 . Data storage is achieved by controlling the amount of charge stored in the floating gate 14 (floating gate) of the memory cell transistor. For memory cell transistors with this structure, if the floating gate is unstable, "over erase" will occur. [0003] In view of this, the prior art provides corresponding solutions, for example with reference to figure 2 As shown, Sanyo Semiconductor proposed a split-gate memory cell structure. In the split gate structure, the drain 21 and the source 22 are split, and the gate 23 has a structure ...

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Problems solved by technology

[0006] The invention solves the problem that the oxide layer formed between the split gates in the prior art is too thick to meet the process requirements and the smile effect is serious

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