Three-dimensional integrated structure and production methods thereof

A three-dimensional integration and production method technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as the impact of MEMS device integrated circuit IC performance, improve the performance of MEMS devices, solve compatibility problems, Guaranteed high density effect

Inactive Publication Date: 2011-05-11
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Whether it is surface integration or bulk silicon integration, more restrictions and technical constraints will be placed on the production of MEMS devices and integrated circuits; a compromise must be made, but it will affect the performance of MEMS devices and integrated circuits IC
Therefore, to realize the r

Method used

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  • Three-dimensional integrated structure and production methods thereof
  • Three-dimensional integrated structure and production methods thereof
  • Three-dimensional integrated structure and production methods thereof

Examples

Experimental program
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Example Embodiment

[0055] Example 1

[0056] Step 1-1, making the TSV deep hole 100 on the first silicon wafer W01, performing oxidation treatment, and then removing the silicon dioxide on the surface of the silicon wafer W01, so that the sidewall of the TSV deep hole 100 is covered by the oxide layer 101 (eg Figure 1-1 to Figure 1-3 shown). The etching of the TSV deep hole 100 may adopt etching technologies such as RIE and DRIE, and may also adopt technologies such as laser drilling and mechanical drilling. Oxidation can be performed using low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), dry oxygen, or wet oxygen.

[0057] Step 1-2: Etch the recessed area 210 on the second silicon wafer W02, and etch the TSV deep hole 200; perform oxidation treatment, and then remove the silicon dioxide on the surface of the silicon wafer W02, so that the sidewall of the TSV deep hole 200 is removed Obtain oxide layer 201 coverage (eg Figure 2-1 to Figure 2-...

Example Embodiment

[0067] Example 2

[0068] Step 1. Take the first silicon wafer and the second silicon wafer for use. The recessed region 210 is etched on the second silicon wafer W02, such as Figure 7 shown. The etching of the recessed region 210 may adopt etching techniques such as RIE and DRIE, and may also adopt other techniques.

[0069] Step 2. Bond the surface where the recessed region 210 is located with the first silicon wafer, then make TSV through holes, and perform insulation treatment on the sidewalls of the TSV, such as Figure 8-1 to Figure 8-4 shown. Silicon-silicon fusion bonding can be used for bonding.

[0070] This step may include a step of thinning the bonded wafer pair. The thinning technology can use chemical mechanical polishing (CMP) technology, or wet etching technology such as TMAH and KOH.

[0071] TSV through holes can be made by RIE, DRIE etching technology, laser drilling, mechanical drilling and other technologies.

[0072] Insulation of the TSV sidewal...

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Abstract

The invention discloses a three-dimensional integrated structure and production methods thereof, belonging to the field of processing of micromachine electronic systems and integrated circuits. The three-dimensional integrated structure comprises a wafer bonding pair, at least one TSV (Through Silicon Via) through hole and a microcopper pillar, a cavity, a first surface, an MEMS (Micro-Electromechanical System) device, a second surface and a chip, wherein the wafer bonding pair is formed by two wafers; the TSV through hole and the microcopper pillar penetrate through the wafer bonding pair; the cavity is positioned at a bonding interface of the wafer bonding pair; the first surface is positioned on the wafer bonding pair; the MEMS device is electrically connected with the microcopper pillar; the second surface is positioned on the wafer bonding pair; and the chip is electrically connected with the TSV through hole. The invention also discloses two production methods of the three-dimensional integrated structure. The invention can be used for manufacturing the integrated circuit. According to the three-dimensional integrated structure and the production methods thereof, the problemof compatibility between the MEMS device and the processing integrated circuit can be effectively solved.

Description

technical field [0001] The invention belongs to the field of micromechanical electronic system (MEMS) and integrated circuit processing, and specifically relates to a three-dimensional integrated structure for realizing MEMS devices and processing integrated circuits and a production method thereof. Background technique [0002] Micromechanical electronic systems (MEMS) are microdevices or microsystems composed of electronic and mechanical components with feature sizes in the submicron to millimeter range, which integrate sensors, processing and actuators to provide one or more specific Functional micro-device or micro-system. The development of MEMS and the exertion of technical advantages depend to a large extent on the level of MEMS integration technology, that is, the production of MEMS devices and the production of integrated circuit ICs need to be well integrated to improve the overall performance of the microsystem. However, there are many types of MEMS devices (such...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81B7/00B81C1/00
Inventor 马盛林孙新朱韫晖金玉丰缪旻
Owner PEKING UNIV
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